Radio-frequency detected fast charge sensing in undoped silicon quantum dots

Abstract

Spin qubits in silicon quantum dots offer a promising platform for a quantum computer as they have a long coherence time and scalability. The charge sensing technique plays an essential role in reading out the spin qubit as well as tuning the device parameters and therefore its performance in terms of measurement bandwidth and sensitivity is an important factor in spin qubit experiments. Here we demonstrate fast and sensitive charge sensing by a radio-frequency reflectometry of an undoped, accumulation-mode Si/SiGe double quantum dot. We show that the large parasitic capacitance in typical accumulation-mode gate geometries impedes reflectometry measurements. We present a gate geometry that significantly reduces the parasitic capacitance and enables fast single-shot readout. The technique allows us to distinguish between the singly- and doubly-occupied two-electron states under the Pauli spin blockade condition in an integration time of 0.8 μs, the shortest value ever reported in silicon, by the signal-to-noise ratio of 6. These results provide a guideline for designing silicon spin qubit devices suitable for the fast and high-fidelity readout.

References in corpus (33)

• Quantum Computation with Quantum Dots
• Surface codes: Towards practical large-scale quantum computation
• Spins in few-electron quantum dots
• Single-shot read-out of an individual electron spin in a quantum dot
• A Two Qubit Logic Gate in Silicon
• A >99.9%-fidelity quantum-dot spin qubit with coherence limited by charge noise
• Single-shot readout of an electron spin in silicon
• A programmable two-qubit quantum processor in silicon
• Interfacing spin qubits in quantum dots and donors - hot, dense and coherent
• Quantum CNOT Gate for Spins in Silicon
• Triplet-Singlet Spin Relaxation via Nuclei in a Double Quantum Dot
• Few-Electron Quantum Dot Circuit with Integrated Charge Read-Out
• Silicon CMOS architecture for a spin-based quantum computer
• Fidelity benchmarks for two-qubit gates in silicon
• Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting
• Fast Single-Charge Sensing with an rf Quantum Point Contact
• Dispersive Readout of a Few-Electron Double Quantum Dot with Fast rf Gate-Sensors
• Silicon qubit fidelities approaching incoherent noise limits via pulse engineering
• Fast sensing of double-dot charge arrangement and spin state with an rf sensor quantum dot
• Rapid high-fidelity gate-based spin read-out in silicon
• Gate-based single-shot readout of spins in silicon
• Integrated silicon qubit platform with single-spin addressability, exchange control and robust single-shot singlet-triplet readout
• Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots
• Charge Relaxation in a Single Electron Si/SiGe Double Quantum Dot
• Quantifying error and leakage in an encoded Si/SiGe triple-dot qubit
• High-fidelity single-shot readout for a spin qubit via an enhanced latching mechanism
• A cryogenic amplifier for fast real-time detection of single-electron tunneling
• Single-Spin Relaxation in a Synthetic Spin-Orbit Field
• Robust Single-Shot Spin Measurement with 99.5% Fidelity in a Quantum Dot Array
• Investigation of Mobility Limiting Mechanisms in Undoped Si/SiGe Heterostructures
• Coherent electron-spin-resonance manipulation of three individual spins in a triple quantum dot
• Fast charge sensing of Si/SiGe quantum dots via a high-frequency accumulation gate
• Spin-Blockade Spectroscopy of Si/SiGe Quantum Dots

Cited by in corpus (42)

• Semiconductor Spin Qubits
• Fast universal quantum control above the fault-tolerance threshold in silicon
• Universal control of a six-qubit quantum processor in silicon
• A hole spin qubit in a fin field-effect transistor above 4 kelvin
• Quantum error correction with silicon spin qubits
• Review of performance metrics of spin qubits in gated semiconducting nanostructures
• Probing quantum devices with radio-frequency reflectometry
• Quantum tomography of an entangled three-spin state in silicon
• Conveyor-mode single-electron shuttling in Si/SiGe for a scalable quantum computing architecture
• A shuttling-based two-qubit logic gate for linking distant silicon quantum processors
• Rapid high-fidelity spin state readout in Si/SiGe quantum dots via radio-frequency reflectometry
• Noise-correlation spectrum for a pair of spin qubits in silicon
• Single-shot readout in graphene quantum dots
• Spin-EPR-pair separation by conveyor-mode single electron shuttling in Si/SiGe
• Spatial noise correlations beyond nearest-neighbor in ${}^{28}$Si/SiGe spin qubits
• Radio frequency reflectometry in silicon-based quantum dots
• Rapid single-shot parity spin readout in a silicon double quantum dot with fidelity exceeding 99 %
• Real-Time Feedback Control of Charge Sensing for Quantum Dot Qubits
• Scalable on-chip multiplexing of silicon single and double quantum dots
• Feedback-based active reset of a spin qubit in silicon
• Radio-frequency reflectometry in bilayer graphene devices utilizing micro graphite back-gates
• Multi-module microwave assembly for fast read-out and charge noise characterization of silicon quantum dots
• Approaching ideal visibility in singlet-triplet qubit operations using energy-selective tunneling-based Hamiltonian estimation
• Wigner-molecularization-enabled dynamic nuclear field programming
• RF Reflectometry for Readout of Charge Transition in a Physically Defined PMOS Silicon Quantum Dot
• Gate reflectometry in dense quantum dot arrays
• Singlet-triplet-state readout in silicon-metal-oxide-semiconductor double quantum dots
• Gate voltage dependence of noise distribution in radio-frequency reflectometry in gallium arsenide quantum dots
• The origins of noise in the Zeeman splitting of spin qubits in natural-silicon devices
• Wide dynamic range charge sensor operation by high-speed feedback control of radio-frequency reflectometry
• Coherence of a field-gradient-driven singlet-triplet qubit coupled to many-electron spin states in 28Si/SiGe
• Tailoring potentials by simulation-aided design of gate layouts for spin qubit applications
• Pursuing high-fidelity control of spin qubits in natural Si/SiGe quantum dot
• Charge state estimation in quantum dots using a Bayesian approach
• The role of antisymmetric orbitals and electron-electron interactions on the two-particle spin and valley blockade in graphene double quantum dots
• Transport in Single Quantum Dots: A Review from Linear Response to Nonlinear Regimes
• Fast time-domain current measurement for quantum dot charge sensing using a homemade cryogenic transimpedance amplifier
• Charge-induced energy shift of a single-spin qubit under a magnetic-field gradient
• 4.2 K Sensitivity-Tunable Radio Frequency Reflectometry of a Physically Defined P-channel Silicon Quantum Dot
• Designs for a two-dimensional Si quantum dot array with spin qubit addressability
• Comparison of spin-qubit architectures for quantum error-correcting codes
• Quantum transfer through a continuum under continuous monitoring