Radio-frequency detected fast charge sensing in undoped silicon quantum dots

Abstract

Spin qubits in silicon quantum dots offer a promising platform for a quantum computer as they have a long coherence time and scalability. The charge sensing technique plays an essential role in reading out the spin qubit as well as tuning the device parameters and therefore its performance in terms of measurement bandwidth and sensitivity is an important factor in spin qubit experiments. Here we demonstrate fast and sensitive charge sensing by a radio-frequency reflectometry of an undoped, accumulation-mode Si/SiGe double quantum dot. We show that the large parasitic capacitance in typical accumulation-mode gate geometries impedes reflectometry measurements. We present a gate geometry that significantly reduces the parasitic capacitance and enables fast single-shot readout. The technique allows us to distinguish between the singly- and doubly-occupied two-electron states under the Pauli spin blockade condition in an integration time of 0.8 μs, the shortest value ever reported in silicon, by the signal-to-noise ratio of 6. These results provide a guideline for designing silicon spin qubit devices suitable for the fast and high-fidelity readout.

References in corpus (5)

• Surface codes: Towards practical large-scale quantum computation
• Single-shot read-out of an individual electron spin in a quantum dot
• Fast Single-Charge Sensing with an rf Quantum Point Contact
• Rapid high-fidelity gate-based spin read-out in silicon
• A cryogenic amplifier for fast real-time detection of single-electron tunneling

Cited by in corpus (36)

• Semiconductor Spin Qubits
• Fast universal quantum control above the fault-tolerance threshold in silicon
• Universal control of a six-qubit quantum processor in silicon
• A hole spin qubit in a fin field-effect transistor above 4 kelvin
• Quantum error correction with silicon spin qubits
• Review of performance metrics of spin qubits in gated semiconducting nanostructures
• Probing quantum devices with radio-frequency reflectometry
• Conveyor-mode single-electron shuttling in Si/SiGe for a scalable quantum computing architecture
• A shuttling-based two-qubit logic gate for linking distant silicon quantum processors
• Noise-correlation spectrum for a pair of spin qubits in silicon
• Single-shot readout in graphene quantum dots
• Spin-EPR-pair separation by conveyor-mode single electron shuttling in Si/SiGe
• Spatial noise correlations beyond nearest-neighbor in ${}^{28}$Si/SiGe spin qubits
• Rapid single-shot parity spin readout in a silicon double quantum dot with fidelity exceeding 99 %
• Real-Time Feedback Control of Charge Sensing for Quantum Dot Qubits
• Scalable on-chip multiplexing of silicon single and double quantum dots
• Feedback-based active reset of a spin qubit in silicon
• Radio-frequency reflectometry in bilayer graphene devices utilizing micro graphite back-gates
• Multi-module microwave assembly for fast read-out and charge noise characterization of silicon quantum dots
• Approaching ideal visibility in singlet-triplet qubit operations using energy-selective tunneling-based Hamiltonian estimation
• Wigner-molecularization-enabled dynamic nuclear field programming
• Singlet-triplet-state readout in silicon-metal-oxide-semiconductor double quantum dots
• Gate voltage dependence of noise distribution in radio-frequency reflectometry in gallium arsenide quantum dots
• The origins of noise in the Zeeman splitting of spin qubits in natural-silicon devices
• Wide dynamic range charge sensor operation by high-speed feedback control of radio-frequency reflectometry
• Tailoring potentials by simulation-aided design of gate layouts for spin qubit applications
• Coherence of a field-gradient-driven singlet-triplet qubit coupled to many-electron spin states in 28Si/SiGe
• Pursuing high-fidelity control of spin qubits in natural Si/SiGe quantum dot
• Charge state estimation in quantum dots using a Bayesian approach
• The role of antisymmetric orbitals and electron-electron interactions on the two-particle spin and valley blockade in graphene double quantum dots
• Transport in Single Quantum Dots: A Review from Linear Response to Nonlinear Regimes
• Fast time-domain current measurement for quantum dot charge sensing using a homemade cryogenic transimpedance amplifier
• Charge-induced energy shift of a single-spin qubit under a magnetic-field gradient
• Designs for a two-dimensional Si quantum dot array with spin qubit addressability
• Comparison of spin-qubit architectures for quantum error-correcting codes
• 4.2 K Sensitivity-Tunable Radio Frequency Reflectometry of a Physically Defined P-channel Silicon Quantum Dot