Real-Time Feedback Control of Charge Sensing for Quantum Dot Qubits
arXiv:2103.15258 · doi:10.1103/PhysRevApplied.15.L031003
Abstract
Measurement of charge configurations in few-electron quantum dots is a vital technique for spin-based quantum information processing. While fast and high-fidelity measurement is possible by using proximal quantum dot charge sensors, their operating range is limited and prone to electrical disturbances. Here we demonstrate realtime operation of a charge sensor in a feedback loop to maintain its sensitivity suitable for fast charge sensing in a Si/SiGe double quantum dot. Disturbances to the charge sensitivity, due to variation of gate voltages for operating the quantum dot and charge fluctuation, are compensated by a digital PID controller with the bandwidth of . The rapid automated tuning of a charge sensor enables unobstructed charge stability diagram measurement facilitating realtime quantum dot tuning and submicrosecond single-shot spin readout without compromising the performance of a charge sensor in time-consuming experiments for quantum information processing.
arXiv comment6 pages, 4 figures
References in corpus (20)
- Single-shot read-out of an individual electron spin in a quantum dot
- Single-shot readout of an electron spin in silicon
- Triplet-Singlet Spin Relaxation via Nuclei in a Double Quantum Dot
- Few-Electron Quantum Dot Circuit with Integrated Charge Read-Out
- Rapid Single-Shot Measurement of a Singlet-Triplet Qubit
- Fast Single-Charge Sensing with an rf Quantum Point Contact
- A fault-tolerant addressable spin qubit in a natural silicon quantum dot
- Dispersive Readout of a Few-Electron Double Quantum Dot with Fast rf Gate-Sensors
- Fast sensing of double-dot charge arrangement and spin state with an rf sensor quantum dot
- Rapid high-fidelity gate-based spin read-out in silicon
- Gate-based single-shot readout of spins in silicon
- Radio-frequency detected fast charge sensing in undoped silicon quantum dots
- High-fidelity single-shot readout for a spin qubit via an enhanced latching mechanism
- Automated tuning of double quantum dots into specific charge states using neural networks
- Robust Single-Shot Spin Measurement with 99.5% Fidelity in a Quantum Dot Array
- Computer-automated tuning procedures for semiconductor quantum dot arrays
- Dynamically controlled charge sensing of a few-electron silicon quantum dot
- Benchmarking high fidelity single-shot readout of semiconductor qubits
- A Machine Learning Approach for Automated Fine-Tuning of Semiconductor Spin Qubits
- Algorithm for automated tuning of a quantum dot into the single-electron regime
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- Measurement of tunnel coupling in a Si double quantum dot based on charge sensing
- Wide dynamic range charge sensor operation by high-speed feedback control of radio-frequency reflectometry
- Stabilizing an individual charge fluctuator in a Si/SiGe quantum dot
- Efficient adaptive Bayesian estimation of a slowly fluctuating Overhauser field gradient
- RFSoC-based radio-frequency reflectometry in gate-defined bilayer graphene quantum devices
- Charge state estimation in quantum dots using a Bayesian approach
- Rapid Autotuning of a SiGe Quantum Dot into the Single-Electron Regime with Machine Learning and RF-Reflectometry FPGA-Based Measurements
- Entropic costs of extracting classical ticks from a quantum clock