95 citations · 111 across the 2 of their papers we have counts for
13 papers
Gate Tunable Magnetism and Giant Magnetoresistance in ABC-stacked Few-Layer Graphene
Yongjin Lee, Shi Che, Jairo Velasco +6
Magnetism is a prototypical phenomenon of quantum collective state, and has found ubiquitous applications in semiconductor technologies such as dynamic random access memory (DRAM).…
Gap Opening in Twisted Double Bilayer Graphene by Crystal fields
Peter Rickhaus, Giulia Zheng, Jose L. Lado +12
Crystal fields occur due to a potential difference between chemically different atomic species. In Van-der-Waals heterostructures such fields are naturally present perpendicular to…
Tunable Valley Splitting due to Topological Orbital Magnetic Moment in Bilayer Graphene Quantum Point Contacts
Yongjin Lee, Angelika Knothe, Hiske Overweg +10
In multivalley semiconductors, the valley degree of freedom can be potentially used to store, manipulate and read quantum information, but its control remains challenging. The vall…
The Electronic Thickness of Graphene
Peter Rickhaus, Ming-Hao Liu, Marcin Kurpas +10
The van-der-Waals stacking technique enables the fabrication of heterostructures, where two conducting layers are atomically close. In this case, the finite layer thickness matters…
Excited states in bilayer graphene quantum dots
A. Kurzmann, M. Eich, H. Overweg +11
We report on ground- and excited state transport through an electrostatically defined few-hole quantum dot in bilayer graphene in both parallel and perpendicular applied magnetic f…
Charge detection in gate-defined bilayer graphene quantum dots
A. Kurzmann, H. Overweg, M. Eich +8
We report on charge detection in electrostatically-defined quantum dot devices in bilayer graphene using an integrated charge detector. The device is fabricated without any etching…