154 citations · 1.3k across the 22 of their papers we have counts for
22 papers
Gate Tunable Magnetism and Giant Magnetoresistance in ABC-stacked Few-Layer Graphene
Yongjin Lee, Shi Che, Jairo Velasco +6
Magnetism is a prototypical phenomenon of quantum collective state, and has found ubiquitous applications in semiconductor technologies such as dynamic random access memory (DRAM).…
Gap Opening in Twisted Double Bilayer Graphene by Crystal fields
Peter Rickhaus, Giulia Zheng, Jose L. Lado +12
Crystal fields occur due to a potential difference between chemically different atomic species. In Van-der-Waals heterostructures such fields are naturally present perpendicular to…
Tunable Valley Splitting due to Topological Orbital Magnetic Moment in Bilayer Graphene Quantum Point Contacts
Yongjin Lee, Angelika Knothe, Hiske Overweg +10
In multivalley semiconductors, the valley degree of freedom can be potentially used to store, manipulate and read quantum information, but its control remains challenging. The vall…
The Electronic Thickness of Graphene
Peter Rickhaus, Ming-Hao Liu, Marcin Kurpas +10
The van-der-Waals stacking technique enables the fabrication of heterostructures, where two conducting layers are atomically close. In this case, the finite layer thickness matters…
Excited states in bilayer graphene quantum dots
A. Kurzmann, M. Eich, H. Overweg +11
We report on ground- and excited state transport through an electrostatically defined few-hole quantum dot in bilayer graphene in both parallel and perpendicular applied magnetic f…
Charge detection in gate-defined bilayer graphene quantum dots
A. Kurzmann, H. Overweg, M. Eich +8
We report on charge detection in electrostatically-defined quantum dot devices in bilayer graphene using an integrated charge detector. The device is fabricated without any etching…
Interactions and magnetotransport through spin-valley coupled Landau levels in monolayer MoS
Riccardo Pisoni, Andor Kormányos, Matthew Brooks +12
The strong spin-orbit coupling and the broken inversion symmetry in monolayer transition metal dichalcogenides (TMDs) results in spin-valley coupled band structures. Such a band st…
Magnetotransport and lateral confinement in an InSe van der Waals Heterostructure
Yongjin Lee, Riccardo Pisoni, Hiske Overweg +10
In the last six years, Indium selenide (InSe) has appeared as a new van der Waals heterostructure platform which has been extensively studied due to its unique electronic and optic…
Gate-Defined Quantum Confinement in InSe-based van der Waals Heterostructures
Matthew Hamer, Endre Tóvári, Mengjian Zhu +13
Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron…
Coupled quantum dots in bilayer graphene
Marius Eich, Riccardo Pisoni, Alessia Pally +8
Electrostatic confinement of charge carriers in bilayer graphene provides a unique platform for carbon-based spin, charge or exchange qubits. By exploiting the possibility to induc…
Twist Angle-Dependent Bands and Valley Inversion in 2D Materials/hBN Heterostructures
Shi Che, Petr Stepanov, Supeng Ge +13
The use of relative twist angle between adjacent atomic layers in a van der Waals heterostructure, has emerged as a new degree of freedom to tune electronic and optoelectronic prop…
Spin and Valley States in Gate-defined Bilayer Graphene Quantum Dots
Marius Eich, František Herman, Riccardo Pisoni +9
In bilayer graphene, electrostatic confinement can be realized by a suitable design of top and back gate electrodes. We measure electronic transport through a bilayer graphene quan…
Transport through a network of topological states in twisted bilayer graphene
Peter Rickhaus, John Wallbank, Sergey Slizovskiy +10
We explore a network of electronic quantum valley Hall (QVH) states in the moiré crystal of minimally twisted bilayer graphene. In our transport measurements we observe Fabry-Pérot…
Gate-Tunable Quantum Dot in a High Quality Single Layer MoS Van der Waals Heterostructure
Riccardo Pisoni, Zijin Lei, Patrick Back +7
We have fabricated an encapsulated monolayer MoS device with metallic ohmic contacts through a pre-patterned hBN layer. In the bulk, we observe an electron mobility…
Edge channel confinement in a bilayer graphene -- quantum dot
Hiske Overweg, Peter Rickhaus, Marius Eich +6
We combine electrostatic and magnetic confinement to define a quantum dot in bilayer graphene. The employed geometry couples -doped reservoirs to a -doped dot. At magnetic fi…
Electrostatically induced quantum point contact in bilayer graphene
Hiske Overweg, Hannah Eggimann, Xi Chen +10
We report the fabrication of electrostatically defined nanostructures in encapsulated bilayer graphene, with leakage resistances below depletion gates as high as G.…
Gate-Defined One-Dimensional Channel and Broken Symmetry States in MoS van der Waals Heterostructures
Riccardo Pisoni, Yongjin Lee, Hiske Overweg +7
We have realized encapsulated trilayer MoS devices with gated graphene contacts. In the bulk, we observe an electron mobility as high as 7000~cm/(V s) at a density of 3 $…
Oscillating magnetoresistance in graphene p-n junctions at intermediate magnetic fields
Hiske Overweg, Hannah Eggimann, Ming-Hao Liu +10
We report on the observation of magnetoresistance oscillations in graphene p-n junctions. The oscillations have been observed for six samples, consisting of single-layer and bilaye…
Energy gaps and layer polarization of integer and fractional quantum Hall states in bilayer graphene
Yanmeng Shi, Yongjin Lee, Shi Che +6
Owing to the spin, valley, and orbital symmetries, the lowest Landau level (LL) in bilayer graphene exhibits multicomponent quantum Hall ferromagnetism. Using transport spectroscop…
Hydration of ions in two dimensional water
S. Dutta, Yongjin Lee, Y. S. Jho
We present a 2D lattice model of water to study the effects of ion hydration on the properties of water. We map the water molecules as lattice particles consisting of a single Oxyg…
Transport in Suspended Monolayer and Bilayer Graphene Under Strain: A New Platform for Material Studies
Hang Zhang, Jhao-Wun Huang, Jairo Velasco +9
We develop two types of graphene devices based on nanoelectromechanical systems (NEMS), that allows transport measurement in the presence of in situ strain modulation. Different mo…
Broken Symmetry Quantum Hall States in Dual Gated ABA Trilayer Graphene
Yongjin Lee, Jairo Velasco, David Tran +6
We present low temperature transport measurements on dual-gated suspended trilayer graphene in the quantum Hall (QH) regime. We observe QH plateaus at filling factors ν=-8, -2, 2,…