Oscillating magnetoresistance in graphene p-n junctions at intermediate magnetic fields

Abstract

We report on the observation of magnetoresistance oscillations in graphene p-n junctions. The oscillations have been observed for six samples, consisting of single-layer and bilayer graphene, and persist up to temperatures of 30 K, where standard Shubnikov-de Haas oscillations are no longer discernible. The oscillatory magnetoresistance can be reproduced by tight-binding simulations. We attribute this phenomenon to the modulated densities of states in the n- and p- regions.

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Cited by in corpus (4)

• Mach-Zehnder interferometry using spin- and valley-polarized quantum Hall edge states in graphene
• Fabry-Pérot resonances and a crossover to the quantum Hall regime in ballistic graphene quantum point contacts
• Gate-controlled transmission of quantum Hall edge states in bilayer graphene
• Graphene $n$-$p$ junctions in the Quantum Hall regime: numerical study of incoherent scattering effects