Gate-controlled transmission of quantum Hall edge states in bilayer graphene

Abstract

The edge states of the quantum Hall and fractional quantum Hall effect of a two-dimensional electron gas provide key access to the excitations of the bulk. Here we demonstrate controlled transmission of edge states in bilayer graphene. Controlled by an independent gate, the backscattering rate of the edge modes is continuously tuned from 0 to close to 1, with fractional quantized values corresponding to the sequential complete backscattering of individual modes. Our experiments demonstrate the feasibility to controllably manipulate edge states in bilayer graphene, thus opening the door to more complex experiments.

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Cited by in corpus (9)

• Gapless Spin Wave Transport through a Quantum Canted-Antiferromagnet
• Metallic Phase and Temperature Dependence of the $\nu =0$ Quantum Hall State in Bilayer Graphene
• Low Magnetic Field Regime of a Gate-Defined Constriction in High-Mobility Graphene
• Aharonov-Bohm oscillations in bilayer graphene edge state Fabry-Pérot interferometers
• Landau Levels of Bilayer Graphene in a WSe${}_2$/Bilayer Graphene van der Waals Heterostructure
• Nanoscale ferroelectric programming of van der Waals heterostructures
• Enhancement in tunneling density of states in Luttinger liquid -- role of non-local interaction
• Tunneling density of states in Luttinger Liquid in proximity to a superconductor: Effect of non-local interaction
• Electron-hole Hybridization in Bilayer Graphene