Landau Levels of Bilayer Graphene in a WSe${}_2$/Bilayer Graphene van der Waals Heterostructure

Abstract

Heterostructures formed between two different van der Waals materials enable interactions and functionalities absent in each component. In this work we show that vicinity to an atomically thin WSe${}_2$ sheet dramatically impacts the energies of the symmetry-broken low Landau levels of bilayer graphene, possibly due to screening. We present a systematic study of the magnetic field and electrical displacement field dependences of the Landau level gaps at filling factor $\nu$ = 1, 2, 3, and compare to BN encapsulated pristine bilayer graphene. The exchange-dominated energy splitting between the N = 0 and 1 orbital wave functions is significantly enhanced, which leads to a modified phase diagram at filling factor $\nu$ = 0 and larger energy gaps at $\nu$ = 1 and 3 in WSe${}_2$/bilayer graphene heterostructures. The exchange-enhanced spin gap at $\nu$ = 2, on the other hand, is reduced by approximately two-fold. Our results demonstrate a possible way to engineer quantum Hall phenomena via van der Waals heterostructures.

References in corpus (18)

• Atomically thin p-n junctions with van der Waals heterointerfaces
• Observation of Long-Lived Interlayer Excitons in Monolayer MoSe2-WSe2 Heterostructures
• Graphene Spintronics
• The electronic properties of bilayer graphene
• Proximity-induced ferromagnetism in graphene revealed by anomalous Hall effect
• Quantum Anomalous Hall Effect in Graphene Proximity Coupled to an Antiferromagnetic Insulator
• Opto-Valleytronic Spin Injection in Monolayer MoS2/Few-Layer Graphene Hybrid Spin Valves
• Tunable Fractional Quantum Hall Phases in Bilayer Graphene
• Evidence for a Spin Phase Transition at ν=0 in Bilayer Graphene
• Local Compressibility Measurements of Correlated States in Suspended Bilayer Graphene
• Proximity effects in bilayer graphene on monolayer WSe${}_2$: Field-effect spin-valley locking, spin-orbit valve, and spin transistor
• Probing charge scattering mechanisms in suspended graphene by varying its dielectric environment
• Lattice Theory of Pseudospin Ferromagnetism in Bilayer Graphene: Competing Orders and Interaction Induced Quantum Hall States
• Minimum Conductivity and Evidence for Phase Transitions in Ultra-clean Bilayer Graphene
• Distinct Competing Ordered ν=2 States in Bilayer Graphene
• Structure and the Lamb-shift-like quantum splitting of the pseudo-zero-mode Landau levels in bilayer graphene
• Metallic Phase and Temperature Dependence of the $\nu =0$ Quantum Hall State in Bilayer Graphene
• Spin-Valley Coherent Phases of the $\nu =0$ Quantum Hall State in Bilayer Graphene

Cited by in corpus (2)

• Gapless Spin Wave Transport through a Quantum Canted-Antiferromagnet
• Landau Level Phases in Bilayer Graphene under Pressure at Charge Neutrality