Theory of valley-resolved spectroscopy of a Si triple quantum dot coupled to a microwave resonator

Abstract

We theoretically study a silicon triple quantum dot (TQD) system coupled to a superconducting microwave resonator. The response signal of an injected probe signal can be used to extract information about the level structure by measuring the transmission and phase shift of the output field. This information can further be used to gain knowledge about the valley splittings and valley phases in the individual dots. Since relevant valley states are typically split by several $\mu \text{eV}$, a finite temperature or an applied external bias voltage is required to populate energetically excited states. The theoretical methods in this paper include a capacitor model to fit experimental charging energies, an extended Hubbard model to describe the tunneling dynamics, a rate equation model to find the occupation probabilities, and an input-output model to determine the response signal of the resonator.

arXiv comment22 pages (single column), 5 figures

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• High-fidelity CNOT gate for spin qubits with asymmetric driving using virtual gates
• Proposal for a cavity-induced measurement of the exchange coupling in quantum dots
• Simulating electron-vibron energy transfer with quantum dots and resonators
• Interplay of Pauli blockade with electron-photon coupling in quantum dots