Proposal for a cavity-induced measurement of the exchange coupling in quantum dots
arXiv:2202.00797 · doi:10.1103/PhysRevResearch.4.033048
Abstract
In spin qubit arrays the exchange coupling can be harnessed to implement two-qubit gates and to realize intermediate-range qubit connectivity along a spin bus. In this work, we propose a scheme to characterize the exchange coupling between electrons in adjacent quantum dots. We investigate theoretically the transmission of a microwave resonator coupled to a triple quantum dot (TQD) occupied by two electrons. We assume that the right quantum dot (QD) is always occupied by one electron while the second electron can tunnel between the left and center QD. If the two electrons are in adjacent dots they interact via the exchange coupling. By means of analytical calculations we show that the transmission profile of the resonator directly reveals the value of the exchange coupling strength between two electrons. From perturbation theory up to second order we conclude that the exchange can still be identified in the presence of magnetic gradients. A valley splitting comparable to the inter-dot tunnel coupling will lead to further modifications of the cavity transmission dips that also depend on the valley phases.
arXiv comment9 pages, 3 figures
References in corpus (73)
- Quantum Computation with Quantum Dots
- Spins in few-electron quantum dots
- An addressable quantum dot qubit with fault-tolerant control fidelity
- Universal Quantum Computation with the Exchange Interaction
- A programmable two-qubit quantum processor in silicon
- Electron spin coherence exceeding seconds in high purity silicon
- Interfacing spin qubits in quantum dots and donors - hot, dense and coherent
- Schrieffer-Wolff transformation for quantum many-body systems
- Quantum CNOT Gate for Spins in Silicon
- A Coherent Spin-Photon Interface in Silicon
- Prospects for Spin-Based Quantum Computing
- Strong spin-photon coupling in silicon
- Strong Coupling of a Single Electron in Silicon to a Microwave Photon
- Coherent single electron spin control in a slanting Zeeman field
- Exchange in silicon-based quantum computer architecture
- Scaling silicon-based quantum computing using CMOS technology: State-of-the-art, Challenges and Perspectives
- A Crossbar Network for Silicon Quantum Dot Qubits
- Coherent spin-qubit photon coupling
- Mesoscopic Cavity Quantum Electrodynamics with Quantum Dots
- The Resonant Exchange Qubit
- Long-Range Microwave Mediated Interactions Between Electron Spins
- Dispersive Readout of a Few-Electron Double Quantum Dot with Fast rf Gate-Sensors
- Superconductor-semiconductor hybrid cavity quantum electrodynamics
- Valley Splitting Theory of SiGe/Si/SiGe Quantum Wells
- Rapid high-fidelity gate-based spin read-out in silicon
- Long-distance entanglement in spin systems
- Valley splitting in strained silicon quantum wells
- Charge and spin state readout of a double quantum dot coupled to a resonator
- Strong coupling of a spin qubit to a superconducting stripline cavity
- Spin relaxation and anticrossing in quantum dots: Rashba versus Dresselhaus spin-orbit coupling
- Ultra-long distance interaction between spin qubits
- Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon
- Pauli Spin Blockade in a Highly Tunable Silicon Double Quantum Dot
- Theory of valley-orbit coupling in a Si/SiGe quantum dot
- High-fidelity quantum gates in Si/SiGe double quantum dots
- Physical mechanisms of interface-mediated intervalley coupling in Si
- Efficient C-Phase gate for single-spin qubits in quantum dots
- Electrically-protected resonant exchange qubits in triple quantum dots
- Electron spin resonance and spin-valley physics in a silicon double quantum dot
- Electrically Protected Valley-Orbit Qubits in Silicon
- Coherent transfer of quantum information in silicon using resonant SWAP gates
- Universal Quantum Computing with Spin and Valley
- Large, tunable valley splitting and single-spin relaxation mechanisms in a Si/SiGe quantum dot
- Efficient multiqubit entanglement via a spin-bus
- Spin properties of single electron states in coupled quantum dots
- High Resolution Valley Spectroscopy of Si Quantum Dots
- Optimized cavity-mediated dispersive two-qubit gates between spin qubits
- Dispersively detected Pauli Spin-Blockade in a Silicon Nanowire Field-Effect Transistor
- Spin dynamics in a strongly driven system: very slow Rabi oscillations
- Quantum dot spin qubits in Silicon: Multivalley physics
- Intervalley coupling for interface-bound electrons in silicon: An effective mass study
- Dispersive readout of valley splittings in cavity-coupled silicon quantum dots
- Electron g-factor of valley states in realistic silicon quantum dots
- Coupling molecular spin states by photon-assisted tunneling
- Spin shuttling in a silicon double quantum dot
- Coupling Two Spin Qubits with a High-Impedance Resonator
- Simultaneous Spin-Charge Relaxation in Double Quantum Dots
- Spin-valley blockade in carbon nanotube double quantum dots
- Optimal dispersive readout of a spin qubit with a microwave resonator
- Detuning Axis Pulsed Spectroscopy of Valley-Orbital States in Si/SiGe Quantum Dots
- Dispersive readout: Universal theory beyond the rotating-wave approximation
- Exchange coupling in a linear chain of three quantum-dot spin qubits in silicon
- A quadrupolar exchange-only spin qubit
- Spin of a multielectron quantum dot and its interaction with a neighboring electron
- Electromagnetic control of valley splitting in ideal and disordered Si quantum dots
- The exchange-only singlet-only spin qubit
- Probing the Spatial Variation of the Inter-Valley Tunnel Coupling in a Silicon Triple Quantum Dot
- Microwave cavity detected spin blockade in a few electron double quantum dot
- A Spin Quintet in a Silicon Double Quantum Dot: Spin Blockade and Relaxation
- Spin-Valley Qubit Dynamics In Exchange Coupled Silicon Quantum Dots
- Theory of valley-resolved spectroscopy of a Si triple quantum dot coupled to a microwave resonator
- Microwave-resonator-detected excited-state spectroscopy of a double quantum dot
- Direct measurement of electron intervalley relaxation in a Si/SiGe quantum dot