Quantum Dots at Room Temperature carved out from Few-Layer Graphene

Abstract

We present graphene quantum dots endowed with addition energies as large as 1.6 eV, fabricated by the controlled rupture of a graphene sheet subjected to a large electron current in air. The size of the quantum dot islands is estimated to be in the 1 nm range. The large addition energies allow for Coulomb blockade at room temperature, with possible application to single-electron devices.

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• Detection of Gas Molecule using C${}_3$N island Single Electron Transistor
• Fabrication of hybrid molecular devices using multi-layer graphene break junctions
• Graphene single electron transistor as a spin sensor for magnetic adsorbates
• Spin switching via quantum dot spin valves
• Evidence of electronic cloaking from chiral electron transport in bilayer graphene nanostructures
• Excitation injector in an atomic chain: long-ranged transport and efficiency amplification
• Design of a Josephson diode based on double magnetic impurities
• Tailoring 10 nm Scale Suspended Graphene Junctions and Quantum Dots
• Electric-field-driven conductance switching in encapsulated graphene nanogaps