Room-temperature gating of molecular junctions using few-layer graphene nanogap electrodes

Abstract

We report on a method to fabricate and measure gateable molecular junctions which are stable at room temperature. The devices are made by depositing molecules inside a few-layer graphene nanogap, formed by feedback controlled electroburning. The gaps have separations on the order of 1-2 nm as estimated from a Simmons model for tunneling. The molecular junctions display gateable IV-characteristics at room temperature.

References in corpus (3)

• Current-induced cleaning of graphene
• Anisotropic Etching and Nanoribbon Formation in Single-Layer Graphene
• Inelastic electron tunneling via molecular vibrations in single-molecule transistors

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