Current-induced nanogap formation and graphitization in boron-doped diamond films
arXiv:1212.2235 · doi:10.1063/1.4766346
Abstract
A high-current annealing technique is used to fabricate nanogaps and hybrid diamond/graphite structures in boron-doped nanocrystalline diamond films. Nanometer-sized gaps down to 1 nm are produced using a feedback-controlled current annealing procedure. The nanogaps are characterized using scanning electron microscopy and electronic transport measurements. The structural changes produced by the elevated temperature, achieved by Joule heating during current annealing, are characterized using Raman spectroscopy. The formation of hybridized diamond/graphite structure is observed at the point of maximum heat accumulation.
arXiv comment14 pages 4 figures + 1 supplemental figure
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- Current-induced nanogap formation and graphitization in boron-doped diamond films