Planar graphene tunnel field-effect transistor
arXiv:1310.6951 · doi:10.1063/1.4863820
Abstract
We propose a concept for a graphene tunnel field-effect transistor. The main idea is based on the use of two graphene electrodes with zigzag termination divided by a narrow gap under the influence of the common gate. Our analysis shows that such device will have a pronounced switching effect at low gate voltage and high on/off current ratio at room temperature.
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