Interaction-induced enhancement of $g$-factor in graphene

Abstract

We study the effect of electron interaction on the spin-splitting and the $g$-factor in graphene in perpendicular magnetic field using the Hartree and Hubbard approximations within the Thomas-Fermi model. We found that the $g$-factor is enhanced in comparison to its free electron value $g=2$ and oscillates as a function of the filling factor $\nu$ in the range $2\le g^{\ast }\lesssim 4$ reaching maxima at even $\nu$ and minima at odd $\nu$. We outline the role of charged impurities in the substrate, which are shown to suppress the oscillations of the $g^{\ast }$-factor. This effect becomes especially pronounced with the increase of the impurity concentration, when the effective $g$-factor becomes independent of the filling factor reaching a value of $g^{\ast }\approx 2.3$. A relation to the recent experiment is discussed.

7 pages, 6 figures

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Cited by in corpus (8)

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• Probing Electron Spin Resonance in Monolayer Graphene
• Spin g-factor due to electronic interactions in graphene
• Phase diagrams and edge-state transitions in graphene with spin-orbit coupling and magnetic and pseudomagnetic fields
• Charge and spin transport on graphene grain boundaries in a quantizing magnetic field
• Excitonic condensation and metal-semiconductor transition in AA bilayer graphene in the external magnetic field
• Spin transport in a graphene normal-superconductor junction in the quantum Hall regime
• Pseudodiffusive conductance, quantum-limited shot noise, and Landau-level hierarchy in biased graphene bilayer