Self-consistent calculation of electric potentials in Hall devices
arXiv:0911.4886 · doi:10.1103/PhysRevB.81.205306
Abstract
Using a first-principles classical many-body simulation of a Hall bar, we study the necessary conditions for the formation of the Hall potential: (i) Ohmic contacts with metallic reservoirs, (ii) electron-electron interactions, and (iii) confinement to a finite system. By propagating thousands of interacting electrons over million time-steps we capture the build-up of the self-consistent potential, which resembles results obtained by conformal-mapping methods. As shown by a microscopic model of the current injection, the Hall effect is linked to specific boundary conditions at the particle reservoirs.
6 pages, 7 figures
References in corpus (6)
- Fractional quantum Hall effect and insulating phase of Dirac electrons in graphene
- Critical exponent for the quantum Hall transition
- Density functional calculations of nanoscale conductance
- Orbital-free energy functional for electrons in two dimensions
- Billiards in magnetic fields: A molecular dynamics approach
- A systematic study of non-ideal contacts in integer quantum Hall systems
Cited by in corpus (11)
- Electronic properties of graphene: a perspective from scanning tunneling microscopy and magneto-transport
- High-performance solution of hierarchical equations of motions for studying energy-transfer in light-harvesting complexes
- Wave packet approach to transport in mesoscopic systems
- Interacting electrons in graphene nanoribbons in the lowest Landau level
- Screening model of metallic non-ideal contacts at integer quantized Hall regime
- Two interacting electrons in a magnetic field: comparison of semiclassical, quantum, and variational solutions
- Surface currents in Hall devices
- Microscopic Details of the Integer Quantum Hall Effect in an Anti-Hall Bar
- Interacting electrons in a magnetic field in a center-of-mass free basis
- The visibility of IQHE at sharp edges: Experimental proposals based on interactions and edge electrostatics
- Screening effect in Spin-Hall Devices