Theory of the quantum Hall effect in graphene
arXiv:0811.4595 · doi:10.1103/PhysRevB.81.081410
Abstract
We study the quantum Hall effect (QHE) in graphene based on the current injection model. In our model, the presence of disorder, the edge-state picture, extended states and localized states, which are believed to be indispensable ingredients in describing the QHE, do not play an important role. Instead the boundary conditions during the injection into the graphene sheet, which are enforced by the presence of the Ohmic contacts, determine the current-voltage characteristics.
4 pages, 3 figures, rewritten, role of contacts for boundary conditions in small devices
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- CODATA Recommended Values of the Fundamental Physical Constants: 2010
- Electronic properties of graphene: a perspective from scanning tunneling microscopy and magneto-transport
- High magnetic field theory for the local density of states in graphene with smooth arbitrary potential landscapes
- Wave packet approach to transport in mesoscopic systems
- Electrical manipulation of the edge states in graphene and the effect on the quantum Hall transport
- Self-consistent calculation of electric potentials in Hall devices
- The effect of magnetic field and disorders on the electronic transport in graphene nanoribbons
- Two interacting electrons in a magnetic field: comparison of semiclassical, quantum, and variational solutions
- Interacting electrons in a magnetic field in a center-of-mass free basis