Quantum Hall conductance of two-terminal graphene devices
arXiv:0810.3397 · doi:10.1103/PhysRevB.80.045408
Abstract
Measurement and theory of the two-terminal conductance of monolayer and bilayer graphene in the quantum Hall regime are compared. We examine features of conductance as a function of gate voltage that allow monolayer, bilayer, and gapped samples to be distinguished, including N-shaped distortions of quantum Hall plateaus and conductance peaks and dips at the charge neutrality point. Generally good agreement is found between measurement and theory. Possible origins of discrepancies are discussed.
References in corpus (8)
- Electric Field Effect in Atomically Thin Carbon Films
- Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
- Gate-induced insulating state in bilayer graphene devices
- Unconventional Integer Quantum Hall effect in graphene
- Bipolar supercurrent in graphene
- Electronic transport and quantum Hall effect in bipolar graphene p-n-p junction
- Conformal Invariance and Shape-Dependent Conductance of Graphene Samples
- The Quantum Hall Effect in Graphene: Emergent Modular Symmetry and the Semi-circle Law