Edge photocurrent in bilayer graphene due to inter-Landau-level transitions

Abstract

We report the observation of the resonant excitation of edge photocurrents in bilayer graphene subjected to terahertz radiation and a magnetic field. The resonantly excited edge photocurrent is observed for both inter-band (at low carrier densities) and intra-band (at high densities) transitions between Landau levels (LL). While the intra-band LL transitions can be traced to the classical cyclotron resonance (CR) and produce strong resonant features, the inter-band-LL resonances have quantum nature and lead to the weaker features in the measured photocurrent spectra. The magnitude and polarization properties of the observed features agree with the semiclassical theory of the intra-band edge photogalvanic effect, including its Shubnikov-de-Haas oscillations at low temperatures.

arXiv comment11 pages, 11 figures

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Cited by in corpus (10)

• Out-of-plane dielectric susceptibility of graphene in twistronic and Bernal bilayers
• Nonlinear intensity dependence of terahertz edge photocurrents in graphene
• Nonlinear intensity dependence of photogalvanics and photoconductance induced by terahertz laser radiation in twisted bilayer graphene close to magic angle
• Raman Photogalvanic Effect: photocurrent at inelastic light scattering
• Cyclotron- and magnetoplasmon resonances in bilayer graphene ratchets
• Infrared photoresistance as a sensitive probe of electronic transport in twisted bilayer graphene
• Temperature Dependent Zero-Field Splittings in Graphene
• Second harmonic generation at the edge of a two-dimensional electron gas
• THz radiation induced circular Hall effect in graphene
• Strong photoresponse of edge two-dimensional electrons in a magnetic field