Determination of Edge Purity in Bilayer Graphene Using micro-Raman Spectroscopy
arXiv:1006.5738 · doi:10.1063/1.3464972
Abstract
Polarization resolved micro-Raman spectroscopy was carried out at the edges of bilayer graphene. We find strong dependence of the intensity of the G band on the incident laser polarization, with its intensity dependence being 90 degrees out of phase for the armchair and zigzag case, in accordance with theoretical predictions. For the case of mixed-state edges we demonstrate that the polarization contrast reflects the fractional composition of armchair and zigzag edges, providing a monitor of edge purity, which is an important parameter for the development of efficient nanoelectronic devices.
3 pages, 3 figures, to appear in Applied Physics Letters
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- Electron Wave Function in Armchair Graphene Nanoribbons
- Edge photocurrent in bilayer graphene due to inter-Landau-level transitions
- Polarization Dependence of Raman Spectra in Strained Graphene
- Quantum Transport in Graphene Nanoribbons with Realistic Edges
- Quantum Inductance and High Frequency Oscillators in Graphene Nanoribbons
- Pseudospin for Raman D Band in Armchair Graphene Nanoribbons
- Aperiodic conductivity oscillations in quasi-ballistic graphene heterojunctions