Identifying the Orientation of Edge of Graphene Using G Band Raman Spectra
arXiv:0911.1593 · doi:10.1143/JPSJ.79.044603
Abstract
The electron-phonon matrix elements relevant to the Raman intensity and Kohn anomaly of the G band are calculated by taking into account the effect of the edge of graphene. The analysis of the pseudospin reveals that the longitudinal optical phonon mode undergoes a strong Kohn anomaly for both the armchair and zigzag edges, and that only the longitudinal (transverse) optical phonon mode is a Raman active mode near the armchair (zigzag) edge. The Raman intensity is enhanced when the polarization of the incident laser light is parallel (perpendicular) to the armchair (zigzag) edge. This asymmetry between the armchair and zigzag edges is useful in identifying the orientation of the edge of graphene.
8 pages, 6 figures
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- The origin of Raman D Band: Bonding and Antibonding Orbitals in Graphene
- Determination of Edge Purity in Bilayer Graphene Using micro-Raman Spectroscopy
- Fermi energy dependence of first- and second-order Raman spectra in graphene: Kohn anomaly and quantum interference effect
- Kohn Anomaly in Raman Spectroscopy of Single Wall Carbon Nanotubes
- Electron Wave Function in Armchair Graphene Nanoribbons
- Berry's Phase for Standing Wave Near Graphene Edge
- Chiral Gauge Theory for Graphene Edge
- Polarization Dependence of Raman Spectra in Strained Graphene
- Characterization of Hydrogen Plasma Defined Graphene Edges
- Pseudospin for Raman D Band in Armchair Graphene Nanoribbons