Fermi energy dependence of first- and second-order Raman spectra in graphene: Kohn anomaly and quantum interference effect
arXiv:1605.02837 · doi:10.1103/PhysRevB.94.075104
Abstract
Intensity of the first- and the second-order Raman spectra are calculated as a function of the Fermi energy. We show that the Kohn anomaly effect, i.e., phonon frequency renormalization, in the first-order Raman spectra originates from the phonon renormalization by the interband electron-hole excitation, whereas in the second-order Raman spectra, a competition between the interband and intraband electron-hole excitations takes place. By this calculation, we confirm the presence of different dispersive behaviors of the Raman peak frequency as a function of the Fermi energy for the first- and the second-order Raman spectra, as observed in experiments. Moreover, the calculated results of the Raman intensity sensitively depend on the Fermi energy for both the first- and the second-order Raman spectra. These results thus also show the importance of quantum interference effect phenomena.
arXiv comment9 pages, 10 figures
References in corpus (30)
- Electric Field Effect in Atomically Thin Carbon Films
- Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
- Chiral tunneling and the Klein paradox in graphene
- Electrochemically Top Gated Graphene: Monitoring Dopants by Raman Scattering
- Ultrafast graphene photodetector
- Room-Temperature Quantum Hall Effect in Graphene
- Andreev reflection and Klein tunneling in graphene
- Electric Field Effect Tuning of Electron-Phonon Coupling in Graphene
- Veselago Lens for Electrons: Focusing and Caustics in Graphene p-n Junctions
- Kohn Anomalies and Electron-Phonon Interaction in Graphite
- Theory of double-resonant Raman spectra in graphene: intensity and line shape of defect-induced and two-phonon bands
- Non-adiabatic Kohn-anomaly in a doped graphene monolayer
- Giant Phonon-induced Conductance in Scanning Tunneling Spectroscopy of Gate-tunable Graphene
- Electron-electron interactions and doping dependence of the two-phonon Raman intensity in graphene
- The phonon dispersion of graphite by inelastic x-ray scattering
- The Nature of Quantum Hall States near the Charge Neutral Dirac Point in Graphene
- Effects of Layer Stacking on the Combination Raman modes in Graphene
- Tuning Kondo physics in Graphene with gate voltage
- Pseudospin and Deformation-induced Gauge Field in Graphene
- Breit-Wigner-Fano lineshapes in Raman spectra of graphene
- Phonon surface mapping of graphite: disentangling quasi--degenerate phonon dispersions
- Intrinsic lineshape of the Raman 2D-mode in freestanding graphene monolayers
- Kohn anomaly and interplay of electron-electron and electron-phonon interactions in epitaxial graphene
- Fano resonance in Raman scattering of graphene
- Phonon self-energy corrections to non-zero wavevector phonon modes in single-layer graphene
- Identifying the Orientation of Edge of Graphene Using G Band Raman Spectra
- Chirality dependent frequency shift of radial breathing mode in metallic carbon nanotubes
- Decay and Frequency Shift of Inter and Intravalley Phonons in Graphene -Dirac Cone Migration-
- Charge confinement and Klein tunneling from doping graphene
- Gate tunable quantum transport in double layer graphene
Cited by in corpus (7)
- Non-adiabatic exciton-phonon coupling in Raman spectroscopy of layered materials
- Probing enhanced electron-phonon coupling in graphene by infrared resonance Raman spectroscopy
- Raman spectra of twisted bilayer graphene close to the magic angle
- Electron-phonon coupling in a magic-angle twisted-bilayer graphene device
- Theory of resonant Raman scattering: Toward a comprehensive \textit{ab initio} description
- Ab initio calculation of the peak intensity of graphene: Combined study of the laser and Fermi energy dependence and importance of quantum interference effects
- In-plane optical phonon modes of current-carrying graphene