Decay and Frequency Shift of Inter and Intravalley Phonons in Graphene -Dirac Cone Migration-
arXiv:1204.4543 · doi:10.1103/PhysRevB.86.201403
Abstract
By considering analytical expressions for the self-energies of intervalley and intravalley phonons in graphene, we describe the behavior of D, 2D, and D Raman bands with changes in doping () and light excitation energy (). Comparing the self-energy with the observed dependence of the 2D bandwidth, we estimate the wavevector of the constituent intervalley phonon at ( is electron's Fermi velocity) and conclude that the self-energy makes a major contribution (60%) to the dispersive behavior of the D and 2D bands. The estimation of is based on an image of shifted Dirac cones in which the resonance decay of a phonon satisfying ( is the phonon frequency) into an electron-hole pair is suppressed when . We highlight the fact that the decay of an intervalley (and intravalley longitudinal optical) phonon with is strongly suppressed by electron-phonon coupling at an arbitrary . This feature is in contrast to the divergent behavior of an intravalley transverse optical phonon, which bears a close similarity to the polarization function relevant to plasmons.
11 pages, 5 figures
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- Theory of a Carbon-Nanotube Polarization Switch
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- Effects of Screening on Propagation of Graphene Surface Plasmons
- Long-wavelength optical phonon behavior in uniaxial strained graphene: Role of electron-phonon interaction
- Valley-antisymmetric potential in graphene under dynamical deformation
- In-plane optical phonon modes of current-carrying graphene
- Massive Dirac Fermions Signal in Raman Spectrum of Graphene