Fano resonance in Raman scattering of graphene
arXiv:1305.5589 · doi:10.1016/j.carbon.2013.05.019
Abstract
Fano resonances and their strong doping dependence are observed in Raman scattering of single-layer graphene (SLG). As the Fermi level is varied by a back-gate bias, the Raman G band of SLG exhibits an asymmetric line shape near the charge neutrality point as a manifestation of a Fano resonance, whereas the line shape is symmetric when the graphene sample is electron or hole doped. However, the G band of bilayer graphene (BLG) does not exhibit any Fano resonance regardless of doping. The observed Fano resonance can be interpreted as interferences between the phonon and excitonic many-body spectra in SLG. The absence of a Fano resonance in the Raman G band of BLG can be explained in the same framework since excitonic interactions are not expected in BLG.
18 pages, 3 figures, to appear in Carbon
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- Electron-phonon coupling in APd3O4: A = Ca, Sr, and Sr0.85Li0.15
- Electron-mediated anharmonicity and its role in the Raman spectrum of graphene
- Electronic Raman scattering from 2D metals with broken inversion symmetry
- Excitation energy dependence of Raman spectra of few-layer WS2