Neutral-current Hall effects in disordered graphene
arXiv:1504.05785 · doi:10.1103/PhysRevB.92.161411
Abstract
A non-local Hall bar geometry is used to detect neutral-current Hall effects in graphene on silicon dioxide. Disorder is tuned by the addition of Au or Ir adatoms in ultra-high vacuum. A reproducible neutral-current Hall effect is found in both as-fabricated and adatom-decorated graphene. The Hall angle exhibits a complex but reproducible dependence on gate voltage and disorder, and notably breaks electron-hole symmetry. An exponential dependence on length between Hall and inverse-Hall probes indicates a neutral current relaxation length of approximately 300 nm. The short relaxation length and lack of precession in parallel magnetic field suggest that the neutral currents are valley currents. The near lack of temperature dependence from 7-300 K is unprecedented and promising for using controlled disorder for room temperature neutral-current electronics.
References in corpus (17)
- Valley filter and valley valve in graphene
- Graphene Spintronics
- Charged Impurity Scattering in Graphene
- Atomic Structure of Graphene on SiO2
- A self-consistent theory for graphene transport
- Intrinsic and Rashba Spin-orbit Interactions in Graphene Sheets
- Spin-orbit coupling in curved graphene, fullerenes, nanotubes, and nanotube caps
- Spin-orbit gap of graphene: First-principles calculations
- Weak localisation magnetoresistance and valley symmetry in graphene
- Detecting Topological Currents in Graphene Superlattices
- Weak localisation in graphene flakes
- Gate-tunable Topological Valley Transport in Bilayer Graphene
- Friedel oscillations, impurity scattering and temperature dependence of resistivity in graphene
- Giant Nonlocality near the Dirac Point in Graphene
- Charge and spin Hall conductivity in metallic graphene
- The Effect of Cluster Formation on Graphene Mobility
- Breit-Wigner-Fano lineshapes in Raman spectra of graphene
Cited by in corpus (27)
- Colloquium: Spintronics in graphene and other two-dimensional materials
- Room temperature spin Hall effect in graphene/MoS van der Waals heterostructures
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- Tunable room-temperature spin galvanic and spin Hall effects in van der Waals heterostructures
- Spin Hall effect and Weak Antilocalization in Graphene/Transition Metal Dichalcogenide Heterostructures
- Spin Hall Effect and Origins of Nonlocal Resistance in Adatom-Decorated Graphene
- Long-range nontopological edge currents in charge-neutral graphene
- Gate tunability of highly efficient spin-to-charge conversion by spin Hall effect in graphene proximitized with WSe
- Direct coupling between charge current and spin polarization by extrinsic mechanisms in graphene
- Absence of a giant spin Hall effect in plasma-hydrogenated graphene
- Valley Hall Effect and Nonlocal Transport in Strained Graphene
- Scale-invariant large nonlocality in polycrystalline graphene
- Impact of complex adatom-induced interactions on quantum spin Hall phases
- Unambiguous Electrical Detection of Spin-Charge Conversion in Lateral Spin-Valves
- Signatures of Helical Edge Transport in Millimetre-Scale Thin Films of Na3Bi
- Minimal Geometry for Valley Filtering in Graphene
- Electronic transport properties of Ir-decorated graphene
- Spin-orbit interaction in Pt or Bi2Te3 nanoparticle-decorated graphene realized by a nanoneedle method
- Anomalous Nonlocal Resistance and Spin-charge Conversion Mechanisms in Two-Dimensional Metals
- Gate-tunable spin Hall effect in an all-light-element heterostructure: graphene with copper oxide
- Numerical study of the giant nonlocal resistance in spin-orbital coupled graphene
- Unexpected hole doping of graphene by osmium adatoms
- Charge-induced artifacts in non-local spin transport measurements: How to prevent spurious voltage signals
- Control of Spin Diffusion and Suppression of the Hanle Effect by the Coexistence of Spin and Valley Hall Effects
- Graphene Electrodynamics in the presence of the Extrinsic Spin Hall Effect
- Charge-spin interconversion in graphene-based systems from density functional theory
- Mimicing the Kane-Mele type spin orbit interaction by spin-flexual phonon coupling in graphene devices