Unexpected hole doping of graphene by osmium adatoms
arXiv:1912.04484 · doi:10.1002/andp.201900294
Abstract
The electronic transport of monolayer graphene devices is studied before and after \emph{in situ} deposition of a sub-monolayer coating of osmium adatoms. Unexpectedly, and unlike all other metallic adatoms studied to date, osmium adatoms shift the charge neutrality point to more positive gate voltages. This indicates that osmium adatoms act as electron acceptors and thus leave the graphene hole-doped. Analysis of transport data suggest that Os adatoms behave as charged impurity scatterers, albeit with a surprisingly low charge-doping efficiency. The charge neutrality point of graphene is found to vary non-monotonically with gate voltage as the sample is warmed to room temperature, suggesting that osmium diffuses on the surface but is not completely removed.
References in corpus (34)
- The electronic properties of graphene
- Quantum Spin Hall Effect in Graphene
- Detection of Individual Gas Molecules Absorbed on Graphene
- Charged Impurity Scattering in Graphene
- A self-consistent theory for graphene transport
- Intrinsic and Rashba Spin-orbit Interactions in Graphene Sheets
- Spin-orbit gap of graphene: First-principles calculations
- Controlling electron-phonon interactions in graphene at ultra high carrier densities
- Quantum Anomalous Hall Effect in HgMnTe Quantum Wells
- Quantum Anomalous Hall Effect in Graphene from Rashba and Exchange Effects
- Band-structure topologies of graphene: spin-orbit coupling effects from first principles
- Tuning the effective fine structure constant in graphene: opposing effects of dielectric screening on short- and long-range potential scattering
- Electrically tunable quantum anomalous Hall effect in 5d transition-metal adatoms on graphene
- Electronic Doping and Scattering by Transition Metals on Graphene
- Quantum Anomalous Hall Effect in Single-layer and Bilayer Graphene
- Observing Atomic Collapse Resonances in Artificial Nuclei on Graphene
- Atomic Collapse and Quasi-Rydberg States in Graphene
- Giant topological insulator gap in graphene with 5d adatoms
- Single particle relaxation time versus transport scattering time in a 2D graphene layer
- Mechanical cleaning of graphene
- Correlated charged impurity scattering in graphene
- The Effect of Cluster Formation on Graphene Mobility
- Orbitally controlled Kondo effect of Co ad-atoms on graphene
- Intrinsic spin-orbit coupling gap and the evidence of a topological state in graphene
- Long-Range Interaction Between Adatoms in Graphene
- Partial Kekule Ordering of Adatoms on Graphene
- Neutral-current Hall effects in disordered graphene
- Absence of a transport signature of spin-orbit coupling in graphene with indium adatoms
- Multiple Quantum Phases in Graphene with Enhanced Spin-Orbit Coupling: From the Quantum Spin Hall Regime to the Spin Hall Effect and a Robust Metallic State
- Transport in indium-decorated graphene
- Alkali doping of graphene: the crucial role of high temperature annealing
- Electronic transport and scattering times in tungsten-decorated graphene
- Impact of Calcium on Transport Property of Graphene
- Graphene with adatoms: tuning the magnetic moment with an applied voltage