Electron-phonon coupling in a magic-angle twisted-bilayer graphene device
arXiv:2110.14916 · doi:10.1021/acs.nanolett.2c00905
Abstract
The importance of phonons in the strong correlation phenomena observed in twisted bilayer graphene (TBG) at the so-called magic-angle is under debate. Here we apply gate-dependent micro-Raman spectroscopy to monitor the G band linewidth in TBG devices of twist angles , (magic-angle) and (large angle). The results show a broad and p/n-asymmetric doping behavior at the magic-angle, in clear contrast to the behavior observed in twist angles above and below. Atomistic modeling reproduces the experimental observations, revealing how the unique electronic structure of magic-angle TBGs influences the electron-phonon coupling and, consequently, the G band linewidth. Our findings indicate a connection between electron-phonon coupling and experimental observations of strongly correlated phenomena in magic-angle TBG.
arXiv comment5 pages, 3 figures, submitted
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