80 citations · 582 across the 23 of their papers we have counts for
23 papers
First-principles study of the structural and electronic properties of BN-ring doped graphene
Laura Caputo, Viet-Hung Nguyen, Jean-Christophe Charlier
Since advanced Silicon-based device components are moderately chemically tunable, doped graphene has emerged as a promising candidate to replace this semiconducting material in fle…
Non-identical moiré twins in bilayer graphene
E. Arrighi, V. -H. Nguyen, M. Di Luca +8
The superlattice obtained by aligning a monolayer graphene and boron nitride (BN) inherits from the hexagonal lattice a sixty degrees periodicity with the layer alignment. It impli…
Self-trapping and switching of solitonic pulses in mismatched dual-core highly nonlinear fibers
N. V. Hung, L. X. T. Tai, M. Longobucco +7
We investigate experimentally and theoretically effects of the inter-core propagation mismatch on nonlinear switching in dual-core high-index-contrast soft-glass optical fibers. In…
Graphene whisperitronics: transducing whispering gallery modes into electronic transport
Boris Brun, Viet-Hung Nguyen, Nicolas Moreau +6
When confined in circular cavities, graphene relativistic charge carriers occupy whispering gallery modes (WGM) in analogy to classical acoustic and optical fields. The rich geomet…
Electron-phonon coupling in a magic-angle twisted-bilayer graphene device
Andreij C. Gadelha, Viet-Hung Nguyen, Eliel G. Neto +6
The importance of phonons in the strong correlation phenomena observed in twisted bilayer graphene (TBG) at the so-called magic-angle is under debate. Here we apply gate-dependent…
Reversible ultrafast soliton switching in dual-core highly nonlinear optical fibers
Nguyen Viet Hung, Le Xuan The Tai, Ignac Bugar +4
We experimentally investigate a nonlinear switching mechanism in a dual-core highly nonlinear optical fiber. We focus the input beam of femtosecond pulses on one core only, to iden…
Lattice dynamics localization in low-angle twisted bilayer graphene
Andreij C. Gadelha, Douglas A. A. Ohlberg, Cassiano Rabelo +20
A low twist angle between the two stacked crystal networks in bilayer graphene enables self-organized lattice reconstruction with the formation of a periodic domain. This superlatt…
Aharonov-Bohm interferences in polycrystalline graphene
Viet Hung Nguyen, Jean-Christophe Charlier
Aharonov-Bohm (AB) interferences in the quantum Hall regime can be achieved, provided that electrons are able to transmit between two edge channels in nanostructures. Pioneering ap…
Strain Modulated Superlattices in Graphene
R. Banerjee, V. -H. Nguyen, T. Granzier-Nakajima +6
Strain engineering of graphene takes advantage of one of the most dramatic responses of Dirac electrons enabling their manipulation via strain-induced pseudo-magnetic fields. Numer…
Stepped Graphene-based Aharonov-Bohm Interferometers
Viet Hung Nguyen, Jean-Christophe Charlier
Aharonov-Bohm interferences in the quantum Hall regime are observed when electrons are transmitted between two edge channels. Such a phenomenon has been realized in 2D systems such…
Klein tunneling and electron optics in Dirac-Weyl fermion systems with tilted energy dispersion
Viet Hung Nguyen, Jean-Christophe Charlier
The outstanding electronic properties of relativistic-like fermions have been extensively studied in solid state systems with isotropic linear dispersions such as graphene. Here, w…
Comment on arXiv:0709.3700 "Orientation dependence of the optical spectra in graphene at high frequencies"
Viet Hung Nguyen, Huy-Viet Nguyen
Zhang et al. reported in [Phys. Rev. B 77, 241402(R) (2008)] a theoretical study of the optical spectra of monolayer graphene employing the Kubo formula within a tight-binding mode…
Valley filtering and electronic optics using polycrystalline graphene
Viet Hung Nguyen, Samuel Dechamps, Philippe Dollfus +1
In this Letter, both the manipulation of valley-polarized currents and the optical-like behaviors of Dirac fermions are theoretically explored in polycrystalline graphene. When str…
Transport gap in vertical devices made of incommensurately misoriented graphene layers
Viet Hung Nguyen, Philippe Dollfus
By means of atomistic tight-binding calculations, we investigate the transport properties of vertical devices made of two incommensurately misoriented graphene layers. With a chose…
Enhanced Seebeck effect in graphene devices by strain and doping engineering
Mai Chung Nguyen, Viet Hung Nguyen, Huy-Viet Nguyen +2
In this work, we investigate the possibility of enhancing the thermoelectric power (Seebeck coefficient) in graphene devices by strain and doping engineering. While a local strain…
Remote Surface Roughness Scattering in FDSOI devices with high-/SiO gate stacks
Y. M. Niquet, I. Duchemin, V. -H. Nguyen +2
We investigate remote surface scattering (RSR) by the SiO/HfO interface in Fully-Depleted Silicon-on-Insulator (FDSOI) devices using Non-Equilibrium Green's Functions. We s…
Strain-induced modulation of Dirac cones and van Hove singularities in twisted graphene bilayer
Viet Hung Nguyen, Philippe Dollfus
By means of atomistic tight-binding calculations, we investigate the effects of uniaxial strain on the electronic bandstructure of twisted graphene bilayer. We find that the bandst…
Strain-induced conduction gap in vertical devices made of twisted graphene layers
Viet Hung Nguyen, Huy-Viet Nguyen, Jerome Saint Martin +1
We investigate the effects of uniaxial strain on the transport properties of vertical devices made of two twisted graphene layers, which partially overlap each other. We find that…
Enhanced thermoelectric figure of merit in vertical graphene junctions
V. Hung Nguyen, M. Chung Nguyen, Huy-Viet Nguyen +2
In this work, we investigate thermoelectric properties of junctions consisting of two partially overlapped graphene sheets coupled to each other in the cross-plane direction. It is…
Conduction gap in graphene strain junctions: direction dependence
Mai Chung Nguyen, Viet Hung Nguyen, Huy-Viet Nguyen +1
It has been shown in a recent study [Nguyen et al., Nanotechnol. \textbf{25}, 165201 (2014)] that unstrained/strained graphene junctions are promising candidates to improve the per…
Quantum calculations of the carrier mobility in thin films: Methodology, Matthiessen's rule and comparison with semi-classical approaches
Yann-Michel Niquet, Viet-Hung Nguyen, François Triozon +3
We discuss the calculation of the carrier mobility in silicon films within the quantum Non-Equilibrium Green's Functions (NEGF) framework. We introduce a new method for the extract…
Resonant tunneling diode based on graphene/h-BN heterostructure
Nguyen Viet Hung, Fulvio Mazzamuto, Arnaud Bournel +1
In this letter, we propose the resonant tunneling diode (RTD) based on a double-barrier graphene/boron nitride (BN) heterostructure as device suitable to take advantage of the elab…
Large peak-to-valley ratio of negative-differential-conductance in graphene p-n junctions
V. Hung Nguyen, A. Bournel, P. Dollfus
We investigate the transport characteristics of monolayer graphene p-n junctions by means of the non-equilibrium Green's function technique. It is shown that thanks to the high int…