Conduction gap in graphene strain junctions: direction dependence
arXiv:1403.5310 · doi:10.1088/0268-1242/29/11/115024
Abstract
It has been shown in a recent study [Nguyen et al., Nanotechnol. \textbf{25}, 165201 (2014)] that unstrained/strained graphene junctions are promising candidates to improve the performance of graphene transistors that is usually hindered by the gapless nature of graphene. Although the energy bandgap of strained graphene still remains zero, the shift of Dirac points in the \textbf{\emph{k}}-space due to strain-induced deformation of graphene lattice can lead to the appearance of a finite conduction gap of several hundreds meV in strained junctions with a strain of only a few percent. However, since it depends essentially on the magnitude of Dirac point shift, this conduction gap strongly depends on the direction of applied strain and the transport direction. In this work, a systematic study of conduction gap properties with respect to these quantities is presented and the results are carefully analyzed. Our study provides useful information for further investigations to exploit graphene strained junctions in electronic applications.
9 pages, 7 figures, submitted
References in corpus (13)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- Ultrahigh electron mobility in suspended graphene
- Energy Band Gap Engineering of Graphene Nanoribbons
- A tight-binding approach to uniaxial strain in graphene
- All-graphene integrated circuits via strain engineering
- Gap opening in graphene by shear strain
- Zero modes of tight binding electrons on the honeycomb lattice
- Geometry, mechanics and electronics of singular structures and wrinkles in graphene
- Valley filter in strain engineered graphene
- Optical Properties of Strained Graphene
- On the possibility of tunable-gap bilayer graphene FET
- Strain induced conductance modulation in graphene grain boundary