Conduction gap in graphene strain junctions: direction dependence
arXiv:1403.5310 · doi:10.1088/0268-1242/29/11/115024
Abstract
It has been shown in a recent study [Nguyen et al., Nanotechnol. \textbf{25}, 165201 (2014)] that unstrained/strained graphene junctions are promising candidates to improve the performance of graphene transistors that is usually hindered by the gapless nature of graphene. Although the energy bandgap of strained graphene still remains zero, the shift of Dirac points in the \textbf{\emph{k}}-space due to strain-induced deformation of graphene lattice can lead to the appearance of a finite conduction gap of several hundreds meV in strained junctions with a strain of only a few percent. However, since it depends essentially on the magnitude of Dirac point shift, this conduction gap strongly depends on the direction of applied strain and the transport direction. In this work, a systematic study of conduction gap properties with respect to these quantities is presented and the results are carefully analyzed. Our study provides useful information for further investigations to exploit graphene strained junctions in electronic applications.
9 pages, 7 figures, submitted
References in corpus (24)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- Ultrahigh electron mobility in suspended graphene
- Energy Band Gap Engineering of Graphene Nanoribbons
- Energy gaps, topological insulator state and zero-field quantum Hall effect in graphene by strain engineering
- A tight-binding approach to uniaxial strain in graphene
- All-graphene integrated circuits via strain engineering
- A new transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride
- Gap opening in graphene by shear strain
- Strain-induced pseudo-magnetic field for novel graphene electronics
- Zero modes of tight binding electrons on the honeycomb lattice
- Quasiparticle bandgap engineering of graphene and graphone on hexagonal boron nitride substrate
- Strain effect on the optical conductivity of graphene
- Geometry, mechanics and electronics of singular structures and wrinkles in graphene
- Valley filter in strain engineered graphene
- Record Maximum Oscillation Frequency in C-face Epitaxial Graphene Transistors
- Optical Properties of Strained Graphene
- Aharonov-Bohm interferences from local deformations in graphene
- Tuning Optical Conductivity of Large-Scale CVD Graphene by Strain Engineering
- On the possibility of tunable-gap bilayer graphene FET
- Lattice-corrected strain-induced vector potentials in graphene
- Strain induced conductance modulation in graphene grain boundary
- Disorder effects on energy bandgap and electronic transport in graphene-nanomesh-based structures
- Conductance across strain junctions in graphene nanoribbons