On the possibility of tunable-gap bilayer graphene FET
arXiv:0810.0128 · doi:10.1109/LED.2008.2010629
Abstract
We explore the device potential of tunable-gap bilayer graphene FET exploiting the possibility of opening a bandgap in bilayer graphene by applying a vertical electric field via independent gate operation. We evaluate device behavior using atomistic simulations based on the self-consistent solution of the Poisson and Schroedinger equations within the NEGF formalism. We show that the concept works, but bandgap opening is not strong enough to suppress band-to-band tunneling in order to obtain a sufficiently large Ion/Ioff ratio for CMOS device operation.
arXiv comment10 pages, 3 figures, submitted to IEEE EDL
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