Resonant tunneling diode based on graphene/h-BN heterostructure

Abstract

In this letter, we propose the resonant tunneling diode (RTD) based on a double-barrier graphene/boron nitride (BN) heterostructure as device suitable to take advantage of the elaboration of atomic sheets containing different domains of BN and C phases within a hexagonal lattice. The device operation and performance are investigated by means of a self- consistent model within the non-equilibrium Green's function formalism on a tight-binding Hamiltonian. This RTD exhibits a negative differential conductance effect which involves the resonant tunneling through both the electron and hole bound states of the graphene quantum well. It is shown that the peak- to-valley ratio can reach the value of 4 at room temperature for gapless graphene and the value of 13 for a bandgap of 50 meV.

3 pages, 4 figures

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Cited by in corpus (4)

• Resonant tunnelling and negative differential conductance in graphene transistors
• Negative Differential Resistance in Boron Nitride Graphene Heterostructures: Physical Mechanisms and Size Scaling Analysis
• Improved performance of graphene transistors by strain engineering
• Molecular dynamics of halogenated graphene - hexagonal boron nitride nanoribbons