80 citations · 582 across the 23 of their papers we have counts for
3 papers · 1 filter
First-principles study of the structural and electronic properties of BN-ring doped graphene
Laura Caputo, Viet-Hung Nguyen, Jean-Christophe Charlier
Since advanced Silicon-based device components are moderately chemically tunable, doped graphene has emerged as a promising candidate to replace this semiconducting material in fle…
Enhanced Seebeck effect in graphene devices by strain and doping engineering
Mai Chung Nguyen, Viet Hung Nguyen, Huy-Viet Nguyen +2
In this work, we investigate the possibility of enhancing the thermoelectric power (Seebeck coefficient) in graphene devices by strain and doping engineering. While a local strain…
Remote Surface Roughness Scattering in FDSOI devices with high-/SiO gate stacks
Y. M. Niquet, I. Duchemin, V. -H. Nguyen +2
We investigate remote surface scattering (RSR) by the SiO/HfO interface in Fully-Depleted Silicon-on-Insulator (FDSOI) devices using Non-Equilibrium Green's Functions. We s…