Conductivity of a graphene strip: width and gate-voltage dependencies

Abstract

We study the conductivity of a graphene strip taking into account electrostatically-induced charge accumulation on its edges. Using a local dependency of the conductivity on the carrier concentration we find that the electrostatic size effect in doped graphene strip of the width of 0.5 - 3 m can result in a significant (about 40%) enhancement of the effective conductivity in comparison to the infinitely wide samples. This effect should be taken into account both in the device simulation as well as for verification of scattering mechanisms in graphene.

3 pages, 4 figures

References in corpus (10)

• Electric Field Effect in Atomically Thin Carbon Films
• The electronic properties of graphene
• Measurement of Scattering Rate and Minimum Conductivity in Graphene
• Electronic transport in graphene: A semi-classical approach including midgap states
• Tuning the effective fine structure constant in graphene: opposing effects of dielectric screening on short- and long-range potential scattering
• Voltage and temperature dependencies of conductivity in gated graphene
• Phenomenological study of the electronic transport coefficients of graphene
• Charge accumulation at the boundaries of a graphene strip induced by a gate voltage: Electrostatic approach
• Theory of charged impurity scattering in two dimensional graphene
• Effect of short- and long-range scattering in the conductivity of graphene: Boltzmann approach vs tight-binding calculations