Quantum Hall transport as a probe of capacitance profile at graphene edges

Abstract

The quantum Hall effect is a remarkable manifestation of quantized transport in a two-dimensional electron gas. Given its technological relevance, it is important to understand its development in realistic nanoscale devices. In this work we present how the appearance of different edge channels in a field-effect device is influenced by the inhomogeneous capacitance profile existing near the sample edges, a condition of particular relevance for graphene. We apply this practical idea to experiments on high quality graphene, demonstrating the potential of quantum Hall transport as a spatially resolved probe of density profiles near the edge of this two-dimensional electron gas.

4 pages, 3 figures

References in corpus (15)

• The electronic properties of graphene
• Ultrahigh electron mobility in suspended graphene
• Suspended Graphene: a bridge to the Dirac point
• Electronic States of Graphene Nanoribbons
• Carrier Statistics and Quantum Capacitance of Graphene Sheets and Ribbons
• Evidence of the role of contacts on the observed electron-hole asymmetry in graphene
• A new transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride
• Quantized conductance of a suspended graphene nanoconstriction
• Charge accumulation at the boundaries of a graphene strip induced by a gate voltage: Electrostatic approach
• Electronic Structure of gated graphene and graphene ribbons
• Large yield production of high mobility freely suspended graphene electronic devices on a PMGI based organic polymer
• Conformal Invariance and Shape-Dependent Conductance of Graphene Samples
• Conductivity of a graphene strip: width and gate-voltage dependencies
• Field induced quantum-Hall ferromagnetism in suspended bilayer graphene
• Spin polarization and g-factor enhancement in graphene nanoribbons in magnetic field

Cited by in corpus (15)

• Edge conduction in monolayer WTe2
• Unexpected edge conduction in HgTe quantum wells under broken time reversal symmetry
• Edge Transport in the Trivial Phase of InAs/GaSb
• Imaging work and dissipation in the quantum Hall state in graphene
• Long-range nontopological edge currents in charge-neutral graphene
• Insulating state in tetralayers reveals an even-odd interaction effect in multilayer graphene
• Unconventional Correlation between Quantum Hall Transport Quantization and Bulk State Filling in Gated Graphene Devices
• Full control of quantum Hall supercurrent in a side gated graphene Josephson junction
• Direct Imaging of Coherent Quantum Transport in Graphene Heterojunctions
• Giant nonlocal edge conduction in the axion insulator state of MnBi2Te4
• Influences of the dissipative topological edge state on quantized transport in MnBi2Te4
• Negative quantum capacitance in graphene nanoribbons with lateral gates
• 2${\Phi }_0$-periodic magnetic interference in ballistic graphene Josephson junctions
• Suppressed compressibility of quantum Hall effect edge states in epitaxial graphene on SiC
• Gate electrostatics and quantum capacitance in ballistic graphene devices