activity
20082013
most citedLinear scaling between momentum and spin scattering in graphene

238 citations · 1.4k across the 13 of their papers we have counts for

collaborators

13 papers

cond-mat.mes-hall2013★ 17 cited

Fine structure of the lowest Landau level in suspended trilayer graphene

H. J. van Elferen, A. Veligura, N. Tombros +4

Magneto-transport experiments on ABC-stacked suspended trilayer graphene reveal a complete splitting of the twelve-fold degenerated lowest Landau level, and, in particular, the ope…

cond-mat.mes-hall2012★ 160 cited

Spin transport in high quality suspended graphene devices

M. H. D. Guimarães, A. Veligura, P. J. Zomer +4

We measure spin transport in high mobility suspended graphene (μ~ 10^5 cm^2/Vs), obtaining a (spin) diffusion coefficient of 0.1 m^2/s and giving a lower bound on the spin relaxati…

cond-mat.mes-hall2012★ 67 cited

Transport Gap in Suspended Bilayer Graphene at Zero Magnetic Field

A. Veligura, H. J. van Elferen, N. Tombros +3

We report a change of three orders of magnitudes in the resistance of a suspended bilayer graphene flake which varies from a few ks in the high carrier density regime to several…

cond-mat.mes-hall2011★ 25 cited

Quantum Hall transport as a probe of capacitance profile at graphene edges

I. J. Vera-Marun, P. J. Zomer, A. Veligura +6

The quantum Hall effect is a remarkable manifestation of quantized transport in a two-dimensional electron gas. Given its technological relevance, it is important to understand its…

cond-mat.mes-hall2011★ 27 cited

Field induced quantum-Hall ferromagnetism in suspended bilayer graphene

H. J. van Elferen, A. Veligura, E. V. Kurganova +5

We have measured the magneto-resistance of freely suspended high-mobility bilayer graphene. For magnetic fields T we observe the opening of a field induced gap at the charge…

cond-mat.mes-hall2011★ 46 cited

Relating Hysteresis and Electrochemistry in Graphene Field Effect Transistors

Alina Veligura, Paul J. Zomer, Ivan J. Vera-Marun +3

Hysteresis and commonly observed p-doping of graphene based field effect transistors (FET) was already discussed in reports over last few years. However, the interpretation of expe…