Relating Hysteresis and Electrochemistry in Graphene Field Effect Transistors

Abstract

Hysteresis and commonly observed p-doping of graphene based field effect transistors (FET) was already discussed in reports over last few years. However, the interpretation of experimental works differs; and the mechanism behind the appearance of the hysteresis and the role of charge transfer between graphene and its environment are not clarified yet. We analyze the relation between electrochemical and electronic properties of graphene FET in moist environment extracted from the standard back gate dependence of the graphene resistance. We argue that graphene based FET on a regular SiO2 substrate exhibits behavior that corresponds to electrochemically induced hysteresis in ambient conditions, and can be caused by charge trapping mechanism associated with sensitivity of graphene to the local pH.

5 pages, 3 figures

References in corpus (6)

• Detection of Individual Gas Molecules Absorbed on Graphene
• Graphene on a hydrophobic substrate: Doping reduction and hysteresis suppression under ambient conditions
• Evidence of the role of contacts on the observed electron-hole asymmetry in graphene
• First-principles studies of water adsorption on graphene: The role of the substrate
• Graphene transistors are insensitive to pH changes in solution
• The environment of graphene probed by electrostatic force microscopy

Cited by in corpus (7)

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• Capacitive Sensing of Intercalated H2O Molecules Using Graphene
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• Hysteretic phenomena in GFET: general theory and experiment
• Impact of the domain structure in ferroelectric substrate on graphene conductance (authors' review)
• Spin Relaxation in Graphene with self-assembled Cobalt Porphyrin Molecules
• STM/S study of electronic inhomogeneity evolution with gate voltage in graphene: role of screening and charge-state of interface defects