Wigner crystal phases in bilayer graphene
arXiv:1602.02777 · doi:10.1103/PhysRevB.95.075438
Abstract
It is generally believed that a Wigner Crystal in single layer graphene can not form because the magnitudes of the Coulomb interaction and the kinetic energy scale similarly with decreasing electron density. However, this scaling argument does not hold for the low energy states in bilayer graphene. We consider the formation of a Wigner Crystal in weakly doped bilayer graphene with an energy gap opened by a perpendicular electric field. We argue that in this system the formation of the Wigner Crystal is not only possible, but different phases of the crystal with very peculiar properties may exist here depending on the system parameters.
8 pages including appendix, 2 figures, accepted to Phys. Rev. B
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Cited by in corpus (13)
- Doped Twisted Bilayer Graphene near Magic Angles: Proximity to Wigner Crystallization not Mott Insulation
- Pressure-Induced Metal-Insulator Transition in Twisted Bi-layer Graphene
- Gate-tunable topological phases in superlattice modulated bilayer graphene
- Interaction-driven (quasi-) insulating ground states of gapped electron-doped bilayer graphene
- Wigner Crystals in Two-Dimensional Transition-Metal Dichalcogenides: Spin Physics and Readout
- Chiral Wigner crystal phases induced by Berry curvature
- Wigner crystallization at large fine structure constant
- Metal-insulator transitions in bilayer electron-hole systems in transition metal dicalcogenides
- Electron binding energy of a donor in bilayer graphene with gate-tunable gap
- Full, three-quarter, half and quarter Wigner crystals in Bernal bilayer graphene
- Absence of diagonal force constants in cubic Coulomb crystals
- Electronic and Phonon Instabilities in Bilayer Graphene under Applied External Bias
- Applied electric and magnetic field effects on the bandgap formation and antiferromagnetic ordering in AA-stacked Bilayer Graphene