Patterning graphene nanostripes in substrate-supported functionalized graphene: A promising route to integrated, robust, and superior transistors

Abstract

It is promising to apply quantum-mechanically confined graphene systems in field-effect transistors. High stability, superior performance, and large-scale integration are the main challenges facing the practical application of graphene transistors. Our understandings of the adatom-graphene interaction combined with recent progress in the nanofabrication technology indicate that very stable and high-quality graphene nanostripes could be integrated in substrate-supported functionalized (hydrogenated or fluorinated) graphene using electron-beam lithography. We also propose that parallelizing a couple of graphene nanostripes in a transistor should be preferred for practical application, which is also very useful for transistors based on graphene nanoribbon.

Frontiers of Physics (2012) to be published

References in corpus (10)

• Electric Field Effect in Atomically Thin Carbon Films
• Energy Band Gap Engineering of Graphene Nanoribbons
• Graphene Nano-Ribbon Electronics
• Room Temperature All Semiconducting sub-10nm Graphene Nanoribbon Field-Effect Transistors
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• Electronic properties of mesoscopic graphene structures: charge confinement and control of spin and charge transport
• Patterning Nanoroads and Quantum Dots on Fluorinated Graphene
• Enhanced stability of hydrogen atoms at the graphene/graphane interface of nanoribbons
• Edge effect on resistance scaling rules in graphene nanostructures

Cited by in corpus (2)

• First-principles study on the electronic and transport properties of periodically nitrogen-doped graphene and carbon nanotube superlattices
• Optical properties of graphane in infrared range