Understanding contact gating in Schottky barrier transistors from 2D channels

Abstract

In this article, a novel two-path model is proposed to quantitatively explain sub-threshold characteristics of back-gated Schottky barrier FETs (SB-FETs) from 2D channel materials. The model integrates the 'conventional' model for SB-FETs with the phenomenon of contact gating - an effect that significantly affects the carrier injection from the source electrode in back-gated field effect transistors. The two-path model is validated by a careful comparison with experimental characteristics obtained from a large number of back-gated WSe2 devices with various channel thicknesses. Our findings are believed to be of critical importance for the quantitative analysis of many three-terminal devices with ultrathin body channels.

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Cited by in corpus (4)

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• Pinpointing the Dominant Component of Contact Resistance to Atomically Thin Semiconductors
• Contact Resistance Optimization in MoS${}_2$ Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications
• Mobility and Threshold Voltage Extraction in Transistors with Gate-Voltage-Dependent Contact Resistance