92 citations · 120 across the 5 of their papers we have counts for
5 papers
Reply to: Mobility overestimation in MoS transistors due to invasive voltage probes
Hong Kuan Ng, Du Xiang, Ady Suwardi +17
In this reply, we include new experimental results and verify that the observed non-linearity in rippled-MoS (leading to mobility kink) is an intrinsic property of a disordered…
Mobility overestimation in MoS transistors due to invasive voltage probes
Peng Wu
Improving carrier mobilities of two-dimensional (2D) semiconductors is highly sought after. Recently, Ng. et al. [1] reported rippled molybdenum disulfide (MoS) transistors on…
Design Considerations for 2D Dirac-Source FETs: Device Parameters, Non-Idealities and Benchmarking
Peng Wu, Joerg Appenzeller
Dirac-source field-effect transistors (DS-FETs) have been proposed as promising candidates for low-power switching devices by leveraging the Dirac cone of graphene as a low-pass en…
Sub-60 mV/decade switching in a metal-insulator-metal-insulator-semiconductor transistor without ferroelectric component
Peng Wu, Joerg Appenzeller
Negative capacitance field-effect transistors (NC-FETs) have attracted wide interest as promising candidates for steep-slope devices, and sub-60 mV/decade switching has been demons…
Understanding contact gating in Schottky barrier transistors from 2D channels
Abhijith Prakash, Hesameddin Ilatikhameneh, Peng Wu +1
In this article, a novel two-path model is proposed to quantitatively explain sub-threshold characteristics of back-gated Schottky barrier FETs (SB-FETs) from 2D channel materials.…