Peng Wu

activity

20172023

most citedUnderstanding contact gating in Schottky barrier transistors from 2D channels

92 citations · 120 across the 5 of their papers we have counts for

collaborators

Showing 2022Show all

2 papers · 1 filter

cond-mat.mes-hall2022

Mobility overestimation in MoS $_{2}$ transistors due to invasive voltage probes

Peng Wu

Improving carrier mobilities of two-dimensional (2D) semiconductors is highly sought after. Recently, Ng. et al. [1] reported rippled molybdenum disulfide (MoS $_{2}$ ) transistors on…

cond-mat.mes-hall2022★ 21 cited

Design Considerations for 2D Dirac-Source FETs: Device Parameters, Non-Idealities and Benchmarking

Peng Wu, Joerg Appenzeller

Dirac-source field-effect transistors (DS-FETs) have been proposed as promising candidates for low-power switching devices by leveraging the Dirac cone of graphene as a low-pass en…

Mobility overestimation in MoS2​ transistors due to invasive voltage probes

Design Considerations for 2D Dirac-Source FETs: Device Parameters, Non-Idealities and Benchmarking

Mobility overestimation in MoS $_{2}$ transistors due to invasive voltage probes