Charge distribution and screening in layered graphene systems

Abstract

The charge distribution induced by external fields in finite stacks of graphene planes, or in semiinfinite graphite is considered. The interlayer electronic hybridization is described by a nearest neighbor hopping term, and the charge induced by the self consistent electrostatic potential is calculated within linear response (RPA). The screening properties are determined by contributions from inter- and intraband electronic transitions. In neutral systems, only interband transitions contribute to the charge polarizability, leading to insulating-like screening properties, and to oscillations in the induced charge, with a period equal to the interlayer spacing. In doped systems, we find a screening length equivalent to 2-3 graphene layers, superimposed to significant charge oscillations.

8 pages

References in corpus (6)

• Two Dimensional Atomic Crystals
• Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics
• Asymmetry gap in the electronic band structure of bilayer graphene
• Electronic states and Landau levels in graphene stacks
• Two Dimensional Electron and Hole Gases at the Surface of Graphite
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Cited by in corpus (8)

• The electronic properties of graphene
• Substrate-induced band gap opening in epitaxial graphene
• Screening and interlayer coupling in multilayer graphene field-effect transistors
• Gate-induced interlayer asymmetry in ABA-stacked trilayer graphene
• Transmission through a biased graphene bilayer barrier
• Electrostatic interactions between graphene layers and their environment
• Inter-Layer Screening Length to Electric Field in Thin Graphite Film
• Semimetalic graphene in a modulated electric potential