Raman spectroscopy and In-situ Raman spectroelectrochemistry of isotopically engineered graphene systems

Abstract

The unique properties of graphene offer immense opportunities for applications to many scientific fields, as well as societal needs, beyond our present imagination. One of the important features of graphene is the relatively simple tunability of its electronic structure, an asset which extends the usability of graphene even further beyond present experience. A direct injection of charge carriers into the conduction or valence bands, i.e., doping, represents a viable way of shifting the Fermi level. In particular, the electrochemical doping should be the method of choice, when higher doping levels are desired and when a firm control of experimental conditions is needed. In this Account, we focus on the electrochemistry of graphene in combination with in-situ Raman spectroscopy, i.e., the in-situ Raman spectroelectrochemistry. Such a combination of methods is indeed very powerful, since Raman spectroscopy can readily monitor not only the changes in the doping level, but it can give information also on eventual stress or disorder in the material. However, when employing Raman spectroscopy, one of its main strengths lies in the utilization of isotope engineering during the chemical vapor deposition (CVD) growth of the graphene samples. The in-situ Raman spectroelectrochemical study of multi-layered systems with smartly designed isotope compositions in individual layers can provide a plethora of knowledge about the mutual interactions: (i) between the graphene layers themselves, (ii) between graphene layers and their directly adjacent environment (e.g., substrate or electrolyte), and (iii) between graphene layers and their extended environment, which is separated from the layer by a certain number of additional graphene layers.

arXiv comment29 pages

References in corpus (17)

• Electric Field Effect in Atomically Thin Carbon Films
• The Raman Fingerprint of Graphene
• Raman spectroscopy as a versatile tool for studying the properties of graphene
• Electrochemically Top Gated Graphene: Monitoring Dopants by Raman Scattering
• Observation of Van Hove singularities in twisted graphene layers
• Electric Field Effect Tuning of Electron-Phonon Coupling in Graphene
• Optical Separation of Mechanical Strain from Charge Doping in Graphene
• Kohn Anomalies and Electron-Phonon Interaction in Graphite
• Raman spectroscopy study of rotated double-layer graphene: Misorientation-angle dependence of electronic structure
• Non-adiabatic Kohn-anomaly in a doped graphene monolayer
• Electron-electron interactions and doping dependence of the two-phonon Raman intensity in graphene
• Compression Behavior of Single-layer Graphene
• Phonon renormalisation in doped bilayer graphene
• Interaction between graphene and copper substrate: The role of lattice orientation
• Charge distribution and screening in layered graphene systems
• Observation of Distinct Electron-Phonon Couplings in Gated Bilayer Graphene
• Calculation of the Raman G peak intensity in monolayer graphene: role of Ward identities

Cited by in corpus (5)

• Strain Assessment in Graphene Through the Raman 2D' Mode
• Temperature and Face Dependent Copper-Graphene Interactions
• Stress and charge transfer in uniaxially strained CVD graphene
• Addressing Raman features of individual layers in isotopically labeled Bernal stacked bilayer graphene
• Graphene under direct compression: stress effects and interlayer coupling