Electrostatic interactions between graphene layers and their environment

Abstract

We analyze the electrostatic interactions between a single graphene layer and a SiO${}_2$ susbtrate, and other materials which may exist in its environment. We obtain that the leading effects arise from the polar modes at the SiO${}_2$ surface, and water molecules, which may form layers between the graphene sheet and the substrate. The strength of the interactions implies that graphene is pinned to the substrate at distances greater than a few lattice spacings. The implications for graphene nanoelectromechanical systems, and for the interaction between graphene and a STM tip are also considered.

improved introduction, section on suspended graphene corrected

References in corpus (24)

• Two Dimensional Atomic Crystals
• Detection of Individual Gas Molecules Absorbed on Graphene
• Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics
• Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
• Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
• Adsorption of H2O, NH3, CO, NO2, and NO on graphene: A first-principles study
• Atomic Structure of Graphene on SiO2
• A self-consistent theory for graphene transport
• Molecular Doping of Graphene
• Dynamical polarization of graphene at finite doping
• Quantum transport of massless Dirac fermions in graphene
• High-Resolution Scanning Tunneling Microscopy Imaging of Mesoscopic Graphene Sheets on an Insulating Surface
• Non-Fermi liquid behaviour of electrons in the half-filled honeycomb lattice (A renormalization group approach)
• Tunable Frohlich Polarons in Organic Single-Crystal Transistors
• Electron scattering on microscopic corrugations in graphene
• Observation of Landau levels of Dirac fermions in graphite
• Asymptotics of the dispersion interaction: analytic benchmarks for van der Waals energy functionals
• Nonuniversality of the dispersion interaction: analytic benchmarks for van der Waals energy functionals
• Flexural phonons in free-standing graphene
• The environment of graphene probed by electrostatic force microscopy
• Charge distribution and screening in layered graphene systems
• Dissipation in graphene and nanotube resonators
• A comparative investigation of thickness measurements of ultra-thin water films by scanning probe techniques
• Electronic lifetimes in ballistic quantum dots electrostatically coupled to metallic environments

Cited by in corpus (50)

• The electronic properties of graphene
• Suspended Graphene: a bridge to the Dirac point
• First-principles study of the interaction and charge transfer between graphene and metals
• Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors
• Scanning Tunneling Spectroscopy of Graphene on Graphite
• Substrate limited electron dynamics in graphene
• First-principles studies of water adsorption on graphene: The role of the substrate
• Electronic properties of graphene: a perspective from scanning tunneling microscopy and magneto-transport
• Gauge field induced by ripples in graphene
• Electron spin relaxation in graphene: the role of the substrate
• High-Field Electrical and Thermal Transport in Suspended Graphene
• Thermal van der Waals Interaction between Graphene Layers
• Interfacial adhesion between graphene and silicon dioxide by density functional theory with van der Waals corrections
• Probing the mechanical properties of graphene using a corrugated elastic substrate
• Adhesion mechanics of graphene membranes
• Bending modes, anharmonic effects and thermal expansion coefficient in single layer and multilayer graphene
• Diffusive Charge Transport in Graphene on SiO2
• An essential mechanism of heat dissipation in carbon nanotube electronics
• Substrate-regulated morphology of graphene
• Large Current Modulation and Spin-Dependent Tunneling of Vertical Graphene/MoS${}_2$ Heterostructures
• Nonlinear Damping in Graphene Resonators
• Gauge fields, ripples and wrinkles in graphene layers
• Electronic Structure Theory of Strained Two-Dimensional Materials with Hexagonal Symmetry
• Proximity coupling in superconductor-graphene heterostructures
• f-Sum Rule and Unconventional Spectral Weight Transfer in Graphene
• Electrical spin injection, transport, and detection in graphene-hexagonal boron nitride van der Waals heterostructures: progress and perspectives
• Pinning of a two-dimensional membrane on top of a patterned substrate: the case of graphene
• Strain engineered graphene using a nanostructured substrate: I Deformations
• Heterostructures of graphene and hBN: electronic, spin-orbit, and spin relaxation properties from first principles
• Observation of a Snap-Through Instability in Graphene
• Snap-through instability of graphene on substrates
• Models of electron transport in single layer graphene
• Effect of external conditions on the structure of scrolled graphene edges
• Mechanical Control of Graphene on Engineered Pyramidal Strain Arrays
• Graphene on Si(111)7x7
• Ballistic transport at room temperature in micrometer size multigraphene
• Transition from ballistic to diffusive behavior of graphene ribbons in the presence of warping and charged impurities
• Anisotropic intrinsic spin relaxation in graphene due to flexural distortions
• Single Gate P-N Junctions in Graphene-Ferroelectric Devices
• Deterministic direct growth of WS2 on CVD graphene arrays
• Graphene morphology regulated by nanowires patterned in parallel on a substrate surface
• Electric field-controlled rippling of graphene
• Tip induced doping effects in local tunnel spectra of graphene
• Suspended graphene devices with local gate control on an insulating substrate
• Elastic Screening of Pseudogauge Fields in Graphene
• Flexural phonons in supported graphene: from pinning to localization
• GraXe, graphene and xenon for neutrinoless double beta decay searches
• Eigenfrequencies of the randomly pinned drum and conductivity of graphene
• Ferroelectric-tunable quantum nonlinearity of chiral Bloch electrons in a moiré system
• Device Chemistry of Graphene Transistors