Graphene on Si(111)7x7
arXiv:1206.0655 · doi:10.1088/0957-4484/23/40/405708
Abstract
We demonstrate that it is possible to mechanically exfoliate graphene under ultra high vacuum conditions on the atomically well defined surface of single crystalline silicon. The flakes are several hundred nanometers in lateral size and their optical contrast is very faint in agreement with calculated data. Single layer graphene is investigated by Raman mapping. The G and 2D peaks are shifted and narrowed compared to undoped graphene. With spatially resolved Kelvin probe measurements we show that this is due to p-type doping with hole densities of n_h \simeq 6x10^{12} cm^{-2}. The in vacuo preparation technique presented here should open up new possibilities to influence the properties of graphene by introducing adsorbates in a controlled way.
8 pages, 7 figures
References in corpus (18)
- The Raman Fingerprint of Graphene
- Two Dimensional Atomic Crystals
- Ultrahigh electron mobility in suspended graphene
- Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
- Doping graphene with metal contacts
- Making graphene visible
- Atomic Structure of Graphene on SiO2
- Tuning the graphene work function by electric field effect
- Carrier transport in 2D graphene layers
- A self-consistent theory for graphene transport
- Electric Field Effect Tuning of Electron-Phonon Coupling in Graphene
- Anomalies in thickness measurements of graphene and few layer graphite crystals by tapping mode atomic force microscopy
- Raman imaging of doping domains in graphene on SiO2
- Topological surface state under graphene for two-dimensional spintronics in air
- The environment of graphene probed by electrostatic force microscopy
- Electrostatic interactions between graphene layers and their environment
- Characterization of nanometer-sized, mechanically exfoliated graphene on the H-passivated Si(100) surface using scanning tunnelling microscopy
- Graphene on insulating crystalline substrates
Cited by in corpus (5)
- Direct growth of low-doped graphene on Ge/Si(001) surfaces
- Exfoliation of 2D van der Waals crystals in ultrahigh vacuum for interface engineering
- Direct growth of graphitic carbon on Si(111)
- Optimizing electronic structure and quantum transport at the graphene-Si(111) interface: An ab-initio density-functional study
- Detecting swift heavy ion irradiation effects with graphene