Raman imaging of doping domains in graphene on SiO2
arXiv:0709.4156 · doi:10.1063/1.2816262
Abstract
We present spatially resolved Raman images of the G and 2D lines of single-layer graphene flakes. The spatial fluctuations of G and 2D lines are correlated and are thus shown to be affiliated with local doping domains. We investigate the position of the 2D line -- the most significant Raman peak to identify single-layer graphene -- as a function of charging up to |n|~4 10^12 cm^-2. Contrary to the G line which exhibits a strong and symmetric stiffening with respect to electron and hole-doping, the 2D line shows a weak and slightly asymmetric stiffening for low doping. Additionally, the line width of the 2D line is, in contrast to the G line, doping-independent making this quantity a reliable measure for identifying single-layer graphene.
References in corpus (13)
- Two-Dimensional Gas of Massless Dirac Fermions in Graphene
- The Raman Fingerprint of Graphene
- Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
- Energy Band Gap Engineering of Graphene Nanoribbons
- Spatially Resolved Raman Spectroscopy of Single- and Few-Layer Graphene
- Raman scattering from high frequency phonons in supported n-graphene layer films
- Born-Oppenheimer Breakdown in Graphene
- Carrier transport in 2D graphene layers
- Electric Field Effect Tuning of Electron-Phonon Coupling in Graphene
- Kohn Anomalies and Electron-Phonon Interaction in Graphite
- Non-adiabatic Kohn-anomaly in a doped graphene monolayer
- Phonon Linewidths and Electron Phonon Coupling in Nanotubes
- Phase coherent transport in a side-gated mesoscopic graphite wire
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- Biotransformation and biological impact of graphene and graphene oxide during simulated oral ingestion
- Scanning Raman spectroscopy of graphene antidot lattices: Evidence for systematic p-type doping
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- Rapid and catalyst-free CVD growth of graphene on hBN
- Localized States and Resultant Band Bending in Graphene Antidot Superlattices
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- Theory of resonant Raman scattering: Toward a comprehensive \textit{ab initio} description
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