Direct growth of mm-size twisted bilayer graphene by plasma-enhanced chemical vapor deposition
arXiv:2005.05007 · doi:10.1016/j.carbon.2019.09.052
Abstract
Plasma enhanced chemical vapor deposition (PECVD) techniques have been shown to be an efficient method to achieve single-step synthesis of high-quality monolayer graphene (MLG) without the need of active heating. Here we report PECVD-growth of single-crystalline hexagonal bilayer graphene (BLG) flakes and mm-size BLG films with the interlayer twist angle controlled by the growth parameters. The twist angle has been determined by three experimental approaches, including direct measurement of the relative orientation of crystalline edges between two stacked monolayers by scanning electron microscopy, analysis of the twist angle-dependent Raman spectral characteristics, and measurement of the Moiré period with scanning tunneling microscopy. In mm-sized twisted BLG (tBLG) films, the average twist angle can be controlled from 0 to approximately 20 \degree, and the angular spread for a given growth condition can be limited to < 7 \degree. Different work functions between MLG and BLG have been verified by the Kelvin probe force microscopy and ultraviolet photoelectron spectroscopy. Electrical measurements of back-gated field-effect-transistor devices based on small-angle tBLG samples revealed high-quality electric characteristics at 300 K and insulating temperature dependence down to 100 K. This controlled PECVD-growth of tBLG thus provides an efficient approach to investigate the effect of varying Moiré potentials on tBLG.
arXiv commentManuscript (39 pages, 10 figures) and Supplementary Information (11 pages, 6 figures). Published in Carbon
References in corpus (57)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- The Raman Fingerprint of Graphene
- Graphene: Status and Prospects
- Two Dimensional Atomic Crystals
- Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
- Magic-angle graphene superlattices: a new platform for unconventional superconductivity
- Detection of Individual Gas Molecules Absorbed on Graphene
- Raman spectroscopy as a versatile tool for studying the properties of graphene
- Boron nitride substrates for high-quality graphene electronics
- Quantifying defects in graphene via Raman spectroscopy at different excitation energies
- Moire bands in twisted double-layer graphene
- Doping graphene with metal contacts
- Landau level degeneracy and quantum Hall effect in a graphite bilayer
- Evolution of graphene growth on Cu and Ni studied by carbon isotope labeling
- Observation of Electron-Hole Puddles in Graphene Using a Scanning Single Electron Transistor
- Charged Impurity Scattering in Graphene
- Raman scattering from high frequency phonons in supported n-graphene layer films
- Dimensional crossover of thermal transport in few-layer graphene materials
- Tuning the graphene work function by electric field effect
- Carrier transport in 2D graphene layers
- Observation of Van Hove singularities in twisted graphene layers
- Temperature dependent transport in suspended graphene
- Electric Field Effect Tuning of Electron-Phonon Coupling in Graphene
- Measurement of Scattering Rate and Minimum Conductivity in Graphene
- Flat Bands in Slightly Twisted Bilayer Graphene
- Quantum transport of massless Dirac fermions in graphene
- Single Layer Behavior and Its Breakdown in Twisted Graphene Layers
- Raman spectroscopy study of rotated double-layer graphene: Misorientation-angle dependence of electronic structure
- Commensuration and Interlayer Coherence in Twisted Bilayer Graphene
- Carrier scattering, mobilities and electrostatic potential in mono-, bi- and tri-layer graphenes
- First direct observation of a nearly ideal graphene band structure
- Band Structure of ABC-Stacked Graphene Trilayers
- Band structure engineering of epitaxial graphene on SiC by molecular doping
- Boron Nitride Substrates for High Mobility Chemical Vapor Deposited Graphene
- Interference enhancement of Raman signal of graphene
- Tuning the effective fine structure constant in graphene: opposing effects of dielectric screening on short- and long-range potential scattering
- Broken symmetry states and divergent resistance in suspended bilayer graphene
- Electronic properties of bilayer and multilayer graphene
- Electronic properties of graphene: a perspective from scanning tunneling microscopy and magneto-transport
- Trigonal warping and Berry's phase N pi in ABC-stacked multilayer graphene
- First Principles Study of Work Functions of Single Wall Carbon Nanotubes
- Chiral Decomposition in the Electronic Structure of Graphene Multilayers
- Orbital diamagnetism in multilayer graphenes: Systematic study with the effective mass approximation
- Surface Potentials and Layer Charge Distributions in Few-Layer Graphene Films
- Single-step deposition of high-mobility graphene at reduced temperatures
- Raman imaging of doping domains in graphene on SiO2
- Theory of carrier transport in bilayer graphene
- Observation of Low Energy Raman Modes in Twisted Bilayer Graphene
- Electronic spectrum of twisted bilayer graphene
- Disorder-induced temperature-dependent transport in graphene: Puddles, impurities, activation, and diffusion
- Transport in gapped bilayer graphene: the role of potential fluctuations
- A non-dispersive Raman D-band activated by well-ordered interlayer interactions in rotationally stacked bi-layer Graphene
- Thermoelectric Transport of Massive Dirac Fermions in Bilayer Graphene
- Non-monotonic temperature dependent transport in graphene grown by Chemical Vapor Deposition
- Insulating behavior in metallic bilayer graphene: Interplay between density inhomogeneity and temperature
- Mobilities and Scattering Times in Decoupled Graphene Monolayers