Single-step deposition of high-mobility graphene at reduced temperatures

Abstract

Current methods of chemical vapor deposition (CVD) of graphene on copper are complicated by multiple processing steps and by high temperatures required in both preparing the copper and inducing subsequent film growth. Here we demonstrate a plasma-enhanced CVD chemistry that enables the entire process to take place in a single step, at reduced temperatures (< 420 C), and in a matter of minutes. Growth on copper foils is found to nucleate from arrays of well-aligned domains, and the ensuing films possess sub-nanometre smoothness, excellent crystalline quality, low strain, few defects and room temperature electrical mobility up to (6.0 +- 1.0) x 10^{4} cm^{2}V^{-1}s^{-1}, better than that of large, single-crystalline graphene derived from thermal CVD growth. These results indicate that elevated temperatures and crystalline substrates are not necessary for synthesizing high-quality graphene.

arXiv comment20 pages & 5 figures in Main Text; 12 pages & 9 figures in supplementary material

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Cited by in corpus (8)

• Nanoscale Strain Engineering of Giant Pseudo-Magnetic Fields, Valley Polarization and Topological Channels in Graphene
• Graphene-based synthetic antiferromagnets and ferrimagnets
• Direct growth of mm-size twisted bilayer graphene by plasma-enhanced chemical vapor deposition
• Theory of electronic and spin-orbit proximity effects in graphene on Cu(111)
• Nano-scale strain engineering of graphene and graphene-based devices
• Valley-dependent Lorentz force and Aharonov-Bohm phase in strained graphene p-n junction
• First-principles calculations of electrical conductivities of edge-modified graphene nanoribbons: strain effect
• Coulomb drag transistor via graphene/MoS2 heterostructures