Ballistic transport at room temperature in micrometer size multigraphene

Abstract

The intrinsic values of the carriers mobility and density of the graphene layers inside graphite, the well known structure built on these layers in the Bernal stacking configuration, are not well known mainly because most of the research was done in rather bulk samples where lattice defects hide their intrinsic values. By measuring the electrical resistance through microfabricated constrictions in micrometer small graphite flakes of a few tens of nanometers thickness we studied the ballistic behavior of the carriers. We found that the carriers' mean free path is micrometer large with a mobility $\mu \simeq 6\times 10^6$cm${}^2$/Vs and a carrier density $n\simeq 7\times 10^8$cm${}^{-2}$ per graphene layer at room temperature. These distinctive transport and ballistic properties have important implications for understanding the values obtained in single graphene and in graphite as well as for implementing this last in nanoelectronic devices.

6 pages, 6 figures

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• Turbostratic graphitic microstructures: electronically decoupled multilayer graphene devices with robust high charge carrier mobility
• Evidence for room temperature superconductivity at graphite interfaces
• Invited review: Graphite and its hidden superconductivity
• Interface size dependence of the Josephson critical behaviour in pyrolytic graphite
• Nonintrinsic origin of the magnetic-field-induced metal-insulator and electronic phase transitions in graphite
• Influence of surface band bending on a narrow band gap semiconductor: Tunneling atomic force studies of graphite with Bernal and rhombohedral stacking orders
• Extraordinary magnetoresistance in graphite: experimental evidence for the time-reversal symmetry breaking
• Record-Breaking Magnetoresistance at the Edge of a Microflake of Natural Graphite