Evidence for semiconducting behavior with a narrow band gap of Bernal graphite
arXiv:1106.0437 · doi:10.1088/1367-2630/14/5/053015
Abstract
We have studied the resistivity of a large number of highly oriented graphite samples with areas ranging from several mm to a few m and thickness from nm to several tens of micrometers. The measured resistance can be explained by the parallel contribution of semiconducting graphene layers with low carrier density cm and the one from metallic-like internal interfaces. The results indicate that ideal graphite with Bernal stacking structure is a narrow-gap semiconductor with an energy gap meV.
14 pages, 4 Figures, to be published in New Journal of Physics (in press, 2012)
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