Linear magnetoresistance from Dirac-like fermions in graphite
arXiv:1304.1830 · doi:10.1103/PhysRevB.88.035403
Abstract
We show that magnetoresistance of Bernal-stacked graphite (with the magnetic field parallel to the c-axis and the current in the ab plane) scales linearly with the magnetic field over an interval of classically weak fields. The linearity is related to the presence of extremely light, Dirac-like carriers near the ()- points of the Brillouin zone. The Hall resistivity in this interval also shows a non-analytic, behavior, and is dominated by holes.
References in corpus (8)
- Room-Temperature Quantum Hall Effect in Graphene
- Phase analysis of quantum oscillations in graphite
- Metal-Insulator-Like Behavior in Semimetallic Bismuth and Graphite
- Influence of trigonal warping on interference effects in bilayer graphene
- A consistent interpretation of the low temperature magneto-transport in graphite using the Slonczewski--Weiss--McClure 3D band structure calculations
- Integer Quantum Hall Effect in Graphite
- Strong magnetoresistance of disordered graphene
- Graphite in the bi-layer regime: in-plane transport