Graphite in the bi-layer regime: in-plane transport

Abstract

An interplay between the increase in the number of carriers and the decrease in the scattering time is expected to result in a saturation of the in-plane resistivity, ${\rho }_{ab}$, in graphite above room temperature. Contrary to this expectation, we observe a pronounced increase in ${\rho }_{ab}$ in the interval between 300 and 900 K. We provide a theory of this effect based on intervalley scattering of charge carriers by high-frequency, graphene-like optical phonons.

5 pages, 2 fig

References in corpus (9)

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• Linear magnetoresistance from Dirac-like fermions in graphite